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US 7,479,235 B2Granted
Method for etching a workpiece
AssigneeAhead Magnetics, Inc.
InventorSimone Guerriero
Life of this patent
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Abstract
A method for etching an AlTiC workpiece comprises forming a copper mask layer on the AlTiC, lithographically patterning said copper mask layer to thereby expose portions of the AlTiC, reactive ion etching the AlTiC using a process gas comprising argon and fluorine, and removing the mask layer. The walls of the portions of the AlTiC covered by the copper mask layer are vertical, even when etching is to a substantial depth.
Claims7
A method comprising:
- applying a mask layer to a workpiece, said mask layer comprising copper, said workpiece comprising Al2O3—TiC;
- patterning said mask layer, thereby exposing portions of said Al2O3—TiC;
- and
- reactive ion etching said exposed portions of said Al2O3—TiC with a process gas mixture, said gas mixture comprising an inert gas and a fluorine-containing gas to thereby form a substantially vertical wall, wherein said wall is at least 30 μm high.
1 more element
A method comprising:
- applying a mask layer to a workpiece, said mask layer comprising copper, said workpiece comprising Al2O3—TiC;
- patterning said mask layer, thereby exposing portions of said Al2O3—TiC;
- and
- reactive ion etching said exposed portions of said Al2O3—TiC with a process gas mixture, said gas mixture comprising an inert gas and a fluorine-containing gas to thereby form a wall having a steepness of 75 degrees or greater, wherein said wall is at least 30 μm high.
1 more element
Dependencies are inferred from the claim text.