Method for producing a semiconductor component and a semiconductor component produced according to the method
AssigneeRobert Bosch GmbH
InventorsHubert Benzel, Heribert Weber, Hans Artmann, Frank Schaefer
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Abstract
A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.
Claims29
A method for producing a semiconductor component having a semiconductor substrate, comprising of:
- producing a first porous layer in the semiconductor component in a first step;
- and
- producing one of a hollow and a cavity in the semiconductor component under the first porous layer in a second step;
- wherein the one of the hollow and the cavity is directly produced in the one of the hollow and the cavity producing step by an electrochemical etching method which includes:
- forming a single planar hollow under the first porous layer;
- and
- increasing a depth of the single planar hollow to form the one of the hollow and the cavity.
A method for producing a semiconductor component having a semiconductor substrate, comprising of:
- producing a first porous layer in the semiconductor component;
- and
- producing a cavity in the semiconductor component under the first porous layer by an electrochemical etching which includes:
- forming a single planar hollow under the first porous layer, and
- increasing a depth of the single planar hollow to form the cavity;
- and
- annealing the first porous layer after producing the cavity.
A method for producing a semiconductor component having a semiconductor substrate, comprising of:
- producing a first porous layer in the semiconductor component;
- and
- producing a cavity in the semiconductor component under the first porous layer by an electrochemical etching which includes:
- forming a single planar hollow under the first porous layer, and
- increasing a depth of the single planar hollow to form the cavity;
- annealing the first porous layer after producing the cavity;
- and
- depositing an epitaxial layer on top of the annealed first porous layer.
Dependencies are inferred from the claim text.