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US 7,479,188 B2Granted
Process for producing GaN substrate
AssigneeTohoku Techno Arch Co., Ltd.
InventorsTakafumi Yao, Takuma Suzuki, Hang-ju Ko, Agus Setiawan
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Abstract
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.
Claims6
A process for producing a GaN substrate, comprising:
- forming a buffer layer of MgO on a high-quality substrate;
- generating a ZnO layer on said MgO buffer layer while performing polarity control;
- growing a GaN layer on said ZnO layer while performing polarity control, and
- melting said ZnO layer, thereby producing a GaN substrate.
1 more element
Dependencies are inferred from the claim text.