Method of growing carbon nanotubes and method of manufacturing field emission device using the same

A method of manufacturing a field emission device, comprising:

• preparing a panel that includes a substrate, a negative electrode formed on the substrate, a gate electrode insulating layer formed on the negative electrode, and a gate electrode formed on the gate electrode insulating layer;
• forming a well through the gate electrode and the gate electrode insulating layer until the negative electrode is exposed at a bottom of the well;
• forming a catalyst metal layer on the negative electrode to promote growing of carbon nanotubes;
• forming an amorphous carbon layer on the catalyst metal layer, the amorphous carbon layer partially covering the catalyst metal layer;
• and
• forming a carbon nanotube emitter by growing carbon nanotubes from a surface of the catalyst metal layer, the carbon nanotubes being grown on a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer.

A method of manufacturing a field emission device, comprising:

• preparing a panel that includes a substrate, a negative electrode formed on the substrate, a silicon layer formed on the negative electrode, a gate electrode insulating layer formed on the silicon layer, and a gate electrode formed on the gate electrode insulating layer;
• forming a well through the gate electrode and the gate electrode insulating layer until the silicon layer is exposed at a bottom of the well;
• forming a catalyst metal layer on the silicon layer to promote growing of carbon nanotubes;
• forming an amorphous carbon layer on the catalyst metal layer, the amorphous carbon layer partially covering the catalyst metal layer;
• and
• forming a carbon nanotube emitter by growing carbon nanotubes from a surface of the catalyst metal layer, the carbon nanotubes being grown on a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer.