Nitrogenated carbon electrode for chalcogenide device and method of making same
AssigneeOvonyx, Inc.
InventorJeffrey P. Fournier
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Abstract
A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
Claims31
An electronic device, comprising:
- a phase-change material;
- and
- an electrode in electrical communication with said phase-change material, said electrode comprising nitrogenated carbons,
- wherein the atomic concentration of carbon in said electrode exceeds the atomic concentration of nitrogen in said electrode.
An electronic device, comprising:
- a chalcogenide material;
- and
- an electrode in electrical communication with said chalcogenide material, said electrode comprising nitrogenated carbons,
- wherein the atomic concentration of carbon in said electrode exceeds the atomic concentration of nitrogen in said electrode.
An electronic device, comprising:
- an S-type threshold switching material;
- and
- an electrode in electrical communication with said switching material, said electrode comprising nitrogenated carbon,
- wherein the atomic concentration of carbon in said electrode exceeds the atomic concentration of nitrogen in said electrode.
An electronic device, comprising:
- a programmable resistance material;
- and
- a nitrogenated carbon material in electrical communication with said programmable resistance material wherein the atomic concentration of carbon in said nitrogenated carbon material exceeds the atomic concentration of nitrogen in said nitrogenated carbon material.
An electronic device, comprising:
- a chalcogenide material;
- and
- a nitrogenated carbon material in electrical communication with said chalcogenide material, wherein the atomic concentration of carbon in said nitrogenated carbon material exceeds the atomic concentration of nitrogen in said nitrogenated carbon material.
An electronic device, comprising:
- an S-type threshold switching material;
- and
- a nitrogenated carbon material in electrical communication with said S-type threshold switching material, wherein the atomic concentration of carbon in said nitrogenated carbon material exceeds the atomic concentration of nitrogen in said nitrogenated carbon material.
An electronic device, comprising:
- a phase-change material;
- and
- a first material in communication with said phase-change material, said first material consisting essentially of carbon and nitrogen, wherein the atomic concentration of carbon in said first material exceeds the atomic concentration of nitrogen in said first material.
An electronic device, comprising:
- a chalcogenide material;
- and
- a first material in electrical communication with said chalcogenide material, said first material consisting essentially of carbon and nitrogen, wherein the atomic concentration of carbon in said first material exceeds the atomic concentration of nitrogen in said first material.
An electronic device, comprising:
- an S-type threshold switching material;
- and
- a first material in electrical communication with said switching material, said first material consisting essentially of carbon and nitrogen, wherein the atomic concentration of carbon in said first material exceeds the atomic concentration of nitrogen in said first material.
A method of making an electronic device, said method comprising:
- forming a nitrogenated carbon material, the atomic concentration of carbon in said nitrogenated carbon material exceeding the atomic concentration of nitrogen in said nitrogenated carbon material;
- and
- forming a chalcogenide material, said chalcogenide material being in electrical communication with said nitrogenated carbon material.
Dependencies are inferred from the claim text.