Metal chalcogenide composite nano-particles and layers therewith

A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal, and wherein a stoichiometric deficit of the chalcogenide in said metal chalcogenide composite nano-particle is present.

A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal, and wherein said metal capable of forming p-type semiconducting chalcogenide nano-particles is selected from the group consisting of copper, chromium, iron and nickel.

A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal, wherein said metal capable of forming n-type semiconducting chalcogenide nano-particles is selected from the group consisting of zinc, bismuth, indium, tin, tantalum and titanium, wherein said metal capable of forming p-type semiconducting chalcogenide nano-particles is selected from the group consisting of copper, chromium, iron, lead and nickel, wherein said metal chalcogenide composite particle further comprises a metal capable of forming spectrally sensitizing chalcogenide nano-particles with a band-gap between 1.0 and 2.9 eV, and wherein said metal capable of forming spectrally sensitizing chalcogenide nano-particles is selected from the group consisting of silver, lead, copper, bismuth, vanadium and cadmium.

A dispersion comprising a metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal.

A layer comprising metal chalcogenide composite nano-particles comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal.

A photovoltaic device comprising a layer comprising metal chalcogenide composite nano-particles comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal.