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US 7,467,632 B2Granted
Method for forming a photoresist pattern
AssigneeHynix Semiconductor Inc.
InventorsGeun Su Lee, Cheol Kyu Bok
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Abstract
A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H2O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed.
Claims4
A method for forming a photoresist pattern comprising:
- (a) coating a photoresist composition on top of an underlying layer formed on a semiconductor substrate to form a photoresist film;
- (b) exposing the photoresist film with an exposure light;
- (c) developing the exposed photoresist film with a developing solution, and,
- (d) spraying a cleaning solution over the photoresist film before or after the exposing step (b),
- said cleaning solution comprising H2O and an ionic surfactant represented by Formula 1:
- wherein R is selected from the group consisting of H, C1-C20 alkyl or alkylaryl, and C3-C10 aromatic rings;
- m is an integer ranging from 0 to 100;
- and n is an integer ranging from 10 to 300.
5 more elements
Dependencies are inferred from the claim text.