# US 7,466,882 B2 · Monolithic transmitter/receiver photonic integrated circuit (Tx/RxPIC) transceiver chip

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- Number: US 7,466,882 B2
- Document ID: US7466882B2
- Status: Granted
- Kind: B2
- Application number: 10/999,742
- Filed: 2004-11-30
- Published: 2005-05-12
- Granted: 2008-12-16
- Earliest claimed: 2001-10-09
- Assignees: Infinera Corporation
- Inventors: Fred A. Kish, Jr.; David F. Welch; Charles H. Joyner
- Web page: https://patentgrep.com/patent/US7466882B2

## CPC

- G02B 6/12011: {characterised by the arrayed waveguides, e.g. comprising a filled groove in the array section}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- G01R 31/31728: {Optical aspects, e.g. opto-electronics used for testing, optical signal transmission for testing electronic circuits, electro-optic components to be tested in combination with electronic circuits, measuring light emission of digital circuits (probes having electro-optic elements G01R1/071; electro-optic sampling for oscilloscopes G01R13/347; contactless testing of individual semiconductor devices by optical means G01R31/2656)}
- G01R 31/318511: {Wafer Test}
- G02B 6/12004: {Combinations of two or more optical elements}
- G02B 6/12007: {forming wavelength selective elements, e.g. multiplexer, demultiplexer}
- G02B 6/12019: {characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes (coupling integrated waveguide to fibre G02B6/30, to optoelectronic element G02B6/42; monolithic integration of integrated waveguides with other optical elements G02B6/12004)}
- G02B 6/12021: {Comprising cascaded AWG devices; AWG multipass configuration; Plural AWG devices integrated on a single chip}
- G02B 6/12023: {characterised by means for reducing the polarisation dependence, e.g. reduced birefringence}
- G02B 6/12026: {characterised by means for reducing the temperature dependence}
- G02B 6/12028: {based on a combination of materials having a different refractive index temperature dependence, i.e. the materials are used for transmitting light}
- G02B 6/12033: {characterised by means for configuring the device, e.g. moveable element for wavelength tuning (switching G02B6/35; thermo-optic devices G02F1/0147)}
- G02B 6/131: {by using epitaxial growth (epitaxial growth for semiconductors H10P14/20)}
- G02B 6/136: by etching
- G02B 6/4204: {the coupling comprising intermediate optical elements, e.g. lenses, holograms (encapsulated active devices H01S5/02208)}
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- H01S 5/0265: {Intensity modulators (intra-cavity modulators H01S5/0625)}
- H01S 5/0683: by monitoring the optical output parameters
- H01S 5/12: the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18)
- H01S 5/22: having a ridge or stripe structure
- H01S 5/4031: {Edge-emitting structures}
- H04B 10/2914: {using lumped semiconductor optical amplifiers [SOA]}
- H04B 10/50: Transmitters
- H04J 14/0246: {using one wavelength per ONU}
- H04J 14/025: {using one wavelength per ONU, e.g. for transmissions from-ONU-to-OLT or from-ONU-to-ONU}
- H04J 14/0258: {Wavelength identification or labelling}
- H04J 14/0265: {Multiplex arrangements in bidirectional systems, e.g. interleaved allocation of wavelengths or allocation of wavelength groups}
- H04J 14/0276: {using pilot tones}
- G02F 1/01725: {Non-rectangular quantum well structures, e.g. graded or stepped quantum wells}
- G02F 1/0175: {with a spatially varied well profile, e.g. graded or stepped quantum wells}
- G02F 1/01758: {with an asymmetric well profile, e.g. asymmetrically stepped quantum wells}
- G02F 2203/69: Arrangements or methods for testing or calibrating a device
- H01S 5/0014: {Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R)}
- H01S 5/0085: {for modulating the output, i.e. the laser beam is modulated outside the laser cavity}
- H01S 5/02325: Mechanically integrated components on mount members or optical micro-benches
- H01S 5/0262: {Photo-diodes, e.g. transceiver devices, bidirectional devices (H01S5/0265 takes precedence)}
- H01S 5/0264: {for monitoring the laser-output}
- H01S 5/0268: {Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"}
- H01S 5/06256: {with DBR-structure}
- H01S 5/06258: {with DFB-structure}
- H01S 5/06832: {Stabilising during amplitude modulation}
- H01S 5/1228: {DFB lasers with a complex coupled grating, e.g. gain or loss coupling}
- H01S 5/2077: {using lateral bandgap control during growth, e.g. selective growth, mask induced}
- H01S 5/3408: {characterised by specially shaped wells, e.g. triangular}
- H01S 5/4087: {emitting more than one wavelength}
- H01S 5/50: Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H04J 14/0282: {WDM tree architectures}
- H10F 55/18: {wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection}
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H04B: TRANSMISSION
- H04J: MULTIPLEX COMMUNICATION (transmission in general H04B; peculiar to transmission of digital information H04L5/00; systems for the simultaneous or sequential transmission of more than one television signal H04N7/08; in exchanges H04Q11/00; stereophonic systems H04S)
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A single monolithic transceiver chip for handling optical to electrical to optical conversion of optical WDM signals in an optical transmission network which has an optical WDM signal input for reception of a WDM signal and an optical WDM signal output for transmission of a WDM signal and a plurality of electrical signal outputs and a plurality of electrical signal inputs. The chip further comprises an integrated decombiner coupled to the optical signal input that separates the WDM signal into a plurality of separate optical channel signals, an integrated array of photodetectors that each receives a respective optical channel signal and that converts the optical channel signal into an electrical signal and that provides the converted electrical signals to the electrical signal outputs of the transceiver chip. The transceiver chip also includes an integrated array of laser sources that provide a plurality of optical outputs at different wavelengths, an integrated array of electro-optic modulators that each modulate a respective optical output from a laser source with an electrical signal received from the electrical signal inputs of the chip to provide a plurality of modulated optical channel signals and an integrated optical combiner that receives the modulated optical channel signals and combines them into a single WDM signal that is provided at the optical WDM signal output.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
an optical WDM signal input for reception of a first WDM signal and an optical WDM signal output, the optical WDM signal input and the optical WDM signal output being provided on the substrate;
a plurality of electrical signal outputs and a plurality of electrical signal inputs provided on the substrate, each of the plurality of electrical signal inputs supplying a corresponding one of a plurality of input electrical signals;
a decombiner provided on the substrate and coupled to the optical signal input the decombiner being configured to separate the first WDM signal into a plurality of optical channel signals;
a plurality of photodetectors provided on the substrate, each of the plurality of photodetectors receiving a respective one of the plurality of optical channel signals and outputting a corresponding one of a plurality of output electrical signals, each of the plurality of output electrical signals being provided to a corresponding one of the plurality of electrical signal outputs;
a plurality of laser sources provided on the substrate, each of the plurality of laser sources generating a corresponding one of a plurality of optical outputs, each of the plurality of optical outputs having a corresponding one of a plurality of wavelengths;
a plurality of electro-optic modulators provided on the substrate, each of the plurality of electro-optic modulators being coupled to a respective one of the plurality of electrical signal inputs and receiving a respective one of the plurality of input electrical signals, each of the plurality of electro-optic modulators outputting a corresponding one of a plurality of modulated optical channel signals; and
an optical combiner provided on the substrate, the optical combiner receiving the plurality of modulated optical channel signals and combining the plurality of modulated optical channel signals to form a second WDM signal, the second WDM signal being supplied to the optical WDM signal output.

### Claim 2 (depends on 1)

The semiconductor device of claim 1 wherein the plurality of laser sources comprise DFB lasers or DBR lasers.

### Claim 3 (depends on 1)

The semiconductor device of claim 1 wherein said plurality of electro-optic modulators comprise electro-absorption modulators or Mach-Zehnder modulators.

### Claim 4 (depends on 1)

The semiconductor device of claim 1 wherein said combiner and said decombiner comprise a star coupler, a multi-mode interference combiner, an Echelle grating or an arrayed waveguide grating.

### Claim 5 (depends on 1)

The semiconductor device of claim 1 wherein said plurality of photodetectors comprise avalanche photodiodes or PIN photodiodes.

### Claim 6 (depends on 1)

The semiconductor device of claim 1 wherein the plurality of electrical signal inputs are a first plurality of electrical signal inputs and the plurality of electrical signal outputs are a first plurality of electrical signal outputs, the semiconductor device further comprising an integrated circuit (IC) chip having a second plurality of electrical signal inputs and a second plurality of electrical signal outputs, the first plurality of electrical signal inputs being electrically coupled to the second plurality of electrical signal outputs, and the first plurality of electrical signal outputs being electrically coupled to the second plurality of electrical signal outputs.

### Claim 7 (depends on 6)

The semiconductor device of claim 6 wherein the IC chip is flip-chip bonded to the substrate.

### Claim 8 (depends on 6)

The semiconductor device of claim 6 further comprising a submount, wherein the substrate and the IC chip are flip-chip bonded to opposite sides of the submount.

### Claim 9 (depends on 6)

The semiconductor device of claim 6 wherein the plurality of input electrical signals is a first plurality of input electrical signals and the plurality of output electrical signals is a first plurality of output electrical signals, the IC chip being configured to receive a second plurality of input electrical signals, the IC chip also being configured to reamplify, reshape, and retime the second plurality of input electrical signals to generate a second plurality of output electrical signals.

### Claim 10 (depends on 9)

The semiconductor device of claim 9 wherein said second plurality of output electrical signals are supplied to the first plurality of electrical signal inputs.

### Claim 11 (depends on 1)

The semiconductor device of claim 1 wherein the substrate includes InP.

### Claim 12 (depends on 1)

The semiconductor device of claim 1 wherein said combiner and decombiner collectively constitute an integrated combiner/decombiner; said plurality of laser sources and the plurality of electro-optic modulators are interleaved with selected ones of the plurality of photodetectors.

### Claim 13 (depends on 12)

The semiconductor device of claim 12 further comprising an optical amplifier provided on the substrate.

### Claim 14 (depends on 13)

The semiconductor device of claim 13 wherein said optical amplifier is a gain clamped-semiconductor optical amplifier.

### Claim 15 (depends on 12)

The semiconductor device of claim 12 further comprising an optical amplifier provided between said single integrated combiner/decombiner and each of said plurality of photodetectors.

### Claim 16 (depends on 15)

The semiconductor device of claim 15 wherein said integrated optical amplifier is a semiconductor optical amplifier.

### Claim 17 (depends on 1)

The semiconductor device of claim 1 wherein said optical WDM signal input includes a first waveguide and said optical WDM signal output includes a second waveguide.

### Claim 18 (depends on 17)

The semiconductor device of claim 17 further comprising an optical amplifier in said first waveguide.

### Claim 19 (depends on 18)

The semiconductor device of claim 18 wherein said optical amplifier is a semiconductor optical amplifier.

### Claim 20 (depends on 17)

The semiconductor device of claim 17, wherein the combiner and decombiner collectively constitute an integrated combiner/decombiner, the semiconductor device further comprising an optical amplifier provided between said integrated combiner/decombiner and each of said plurality of photodetectors.

### Claim 21 (depends on 20)

The semiconductor device of claim 20 wherein said optical amplifier is a semiconductor optical amplifier.

### Claim 22 (depends on 1)

An optical transmission network comprising the semiconductor device of claim 1.