# US 7,466,737 B2 · High power semiconductor laser device

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- Number: US 7,466,737 B2
- Document ID: US7466737B2
- Status: Granted
- Kind: B2
- Application number: 11/677,646
- Filed: 2007-02-22
- Published: 2007-08-23
- Granted: 2008-12-16
- Earliest claimed: 2006-02-22
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Byung Jin Ma; Seong Ju Bae
- Web page: https://patentgrep.com/patent/US7466737B2

## CPC

- H01S 5/2022: {Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes}
- H01S 5/04256: {characterised by the configuration}
- H01S 5/20: Structure or shape of the semiconductor body to guide the optical wave {; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers}
- H01S 5/2004: {Confining in the direction perpendicular to the layer structure}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoes optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.

## Claims

### Claim 1

A semiconductor laser device comprising:
first and second conductivity type clad layers;
an active layer interposed between the first and second conductivity type clad layers;
a first optical guide layer disposed between the first conductivity type clad layer and the active layer;
a second optical guide layer disposed between the second conductivity clad layer and the active layer; and
an intentionally undoped optical loss confinement region formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.

### Claim 2 (depends on 1)

The semiconductor laser device according to claim 1, wherein the optical loss confinement region is adjacent to the first or second optical guide layer.

### Claim 3 (depends on 1)

The semiconductor laser device according to claim 1, wherein the optical loss confinement region is formed in both the first and second conductivity type clad layers.

### Claim 4 (depends on 1)

The semiconductor laser device according to claim 1, wherein the optical loss confinement region, the active layer and the first and second optical guide layers have a thickness that occupies at least 80% of the laser beam distribution.

### Claim 5 (depends on 4)

The semiconductor laser device according to claim 4, wherein the optical loss confinement region, the active layer and the first and second optical guide layers have a thickness that occupies at least 90% of the laser beam distribution.

### Claim 6 (depends on 4)

The semiconductor laser device according to claim 4, wherein the optical loss confinement region has a thickness of about 10 nm to about 300 μm.

### Claim 7 (depends on 1)

The semiconductor laser device according to claim 1, wherein the optical loss confinement region has a doping concentration of 5×1016/cm3 or less.