# US 7,466,537 B2 · Capacitor and its manufacturing method

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- Number: US 7,466,537 B2
- Document ID: US7466537B2
- Status: Granted
- Kind: B2
- Application number: 11/626,454
- Filed: 2007-01-24
- Published: 2007-08-16
- Granted: 2008-12-16
- Earliest claimed: 2006-02-24
- Assignees: Seiko Epson Corporation
- Inventors: Masao Nakayama
- Web page: https://patentgrep.com/patent/US7466537B2

## CPC

- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H01G 4/1218: {based on titanium oxides or titanates (H01G4/1245 takes precedence)}
- H10D 1/682: {having dielectrics comprising perovskite structures}
- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- Y10T 29/435: Solid dielectric type
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method for manufacturing a capacitor includes the steps of: forming a lanthanum nickelate layer above a base substrate; forming a dielectric layer above the lanthanum nickelate layer; forming a conductive layer above the dielectric layer; and patterning at least the dielectric layer until the lanthanum nickelate layer is exposed.

## Claims

### Claim 1

A method for manufacturing a capacitor, comprising:
forming a first lanthanum nickelate layer above a base substrate;
forming a dielectric layer above the first lanthanum nickelate layer;
forming a conductive layer above the dielectric layer; forming a second lanthanum nickelate layer above the conductive layer;
patterning at least the dielectric layer until the first lanthanum nickelate layer is exposed;
partially removing a portion of the second lanthanum nickelate layer; and
forming a wiring at the removed portion of the second lanthanum nickelate layer so that the wiring contacts the conductive layer.

### Claim 2 (depends on 1)

The method for manufacturing a capacitor according to claim 1, wherein the dielectric layer is formed to be composed of a perovskite oxide expressed by a general formula ABO3, wherein A is formed to include lead (Pb), and B is formed to include at least one of zirconium (Zr) and titanium (Ti).

### Claim 3 (depends on 1)

The method for manufacturing a capacitor according to claim 1, comprising applying plasma processing to at least the first lanthanum nickelate layer, after patterning.

### Claim 4 (depends on 1)

The method for manufacturing a capacitor according to claim 1, comprising, after patterning, removing at least a portion of the first lanthanum nickelate layer.

### Claim 5

A capacitor comprising:
a base substrate;
a first lanthanum nickelate layer formed above the base substrate;
a dielectric layer formed above the first lanthanum nickelate layer;
a conductive layer formed above the dielectric layer;
a second lanthanum nickelate layer formed above the conductive layer;
a wiring contacting the conductive layer through an opening in the second lanthanum nickelate layer; and
a silicon oxide layer that is in contact with at least the first lanthanum nickelate layer.

### Claim 6 (depends on 5)

The capacitor according to claim 5, wherein the silicon oxide layer covers at least the dielectric layer.

### Claim 7 (depends on 5)

The capacitor according to claim 5, wherein the conductive layer is composed of at least one of a precious metal, an oxide of the precious metal and an alloy formed from the precious metal.

### Claim 8 (depends on 5)

The capacitor according to claim 5, wherein a second conductive layer is formed below the second lanthanum nickelate layer and below the dielectric layer, and the second conductive layer is composed of at least one of a precious metal, an oxide of the precious metal and an alloy formed from the precious metal.

### Claim 9 (depends on 5)

The capacitor according to claim 5, wherein the silicon oxide layer is in contact with an upper surface of the second lanthanum nickelate layer.