# US 7,466,000 B2 · Semiconductor device having multiple substrates

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,466,000 B2
- Document ID: US7466000B2
- Status: Granted
- Kind: B2
- Application number: 11/268,524
- Filed: 2005-11-08
- Published: 2006-03-16
- Granted: 2008-12-16
- Earliest claimed: 2003-03-27
- Assignees: Denso Corporation
- Inventors: Tetsuo Fujii
- Web page: https://patentgrep.com/patent/US7466000B2

## CPC

- B81B 7/0058: {for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations}
- G01P 1/023: {for acceleration measuring devices}
- G01P 15/0802: {Details}
- G01P 15/125: by capacitive pick-up
- B81B 2207/012: the micromechanical device and the control or processing electronics being separate parts in the same package
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- G01P: MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT (measuring or recording blood flow A61B5/02, A61B8/06; monitoring speed or deceleration of electrically-propelled vehicles B60L3/00; vehicle lighting systems adapted to indicate speed B60Q1/54; determining position or course in navigation, measuring ground distance in geodesy or surveying G01C; combined measuring devices for measuring two or more variables of movement G01C23/00; measuring velocity of sound G01H; measuring velocity of light G01J7/00; measuring direction or velocity of solid objects by reception or emission of radiowaves or other waves and based on propagation effects, e.g. Doppler effect, propagation time, direction of propagation, G01S; measuring speed of nuclear radiation G01T; measuring acceleration of gravity G01V; {measuring or recording the speed of trains B61L23/00; speed indicators incorporated in motor vehicles B60K35/00; measuring frequency or phase G01R; traffic control G08G})
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a first substrate including first, second and third layers; a second substrate; and a loop bump. The first and second substrates provides an electric device and physical quantity sensor. The first layer is a shield for protecting the electric device and physical quantity sensor. The physical quantity sensor includes a movable portion surrounded by a first loop layer of the third layer. The loop bump is disposed between the first and second substrates and surrounds the movable portion, and is electrically coupled with the first loop layer so that the loop bump, first loop layer, first layer and second substrate shield the electric device and physical quantity sensor. The first substrate includes inner and outer pads which are electrically coupled through a wire layer which is electrically insulated from the loop bump, so that a signal from the movable portion is output to and external circuit.

## Claims

### Claim 1

A semiconductor device comprising:
a first substrate including first, second and third layers; and
a second substrate including fourth to sixth layers;
wherein the first substrate provides an electric device,
wherein the second substrate provides a physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the second layer of the first substrate is an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein the sixth layer of the second substrate faces the third layer of the first substrate,
wherein the physical quantity sensor includes a movable portion, which is provided by the sixth layer of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with a loop bump so that the movable portion is shielded.

### Claim 2 (depends on 1)

The device according to claim 1,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion so that the first loop layer, the first layer and the second substrate shields the electric device and the physical quantity sensor,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the fourth to sixth layers of the second substrate are stacked in this order,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the bump.

### Claim 3

A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate includes fourth to sixth layers; and
a bump,
wherein the first substrate provides an electric device,
wherein the second substrate provides a physical quantity sensor,
wherein the first layer of the first sub state is a shield for protecting the electric device and the physical quantity sensor,
wherein the electric device is disposed in the third layer of the first substrate,
wherein the physical quantity sensor is disposed in the sixth layer of the second substrate,
wherein the second layer of the first substrate is made of an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein the physical quantity sensor includes a movable portion, which is provided by the sixth layer of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs a signal corresponding to a displacement of the movable portion,
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor,
wherein the bump is disposed between the third layer of the first substrate and the sixth layer of the second substrate,
wherein the first layer of the first substrate and the fourth layer of the second substrate are disposed outside, the fourth layer of the second substrate being apposite to the physical quantity sensor,
wherein the sixth layer of the second substrate faces the third layer of the first substrate so that the first substrate is electrically connected to the second substrate through the bump,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with a loop bump so that the movable portion is shielded.

### Claim 4 (depends on 3)

The device according to claim 3,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion so that the first loop layer, the first layer and the second substrate shields the electric device and the physical quantity sensor,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the bump.

### Claim 5

A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate; and
a loop bump,
wherein the first substrate provides one of an electric device and a physical quantity sensor,
wherein the second substrate provides the other one of the electric device and the physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the physical quantity sensor includes a movable portion,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion,
wherein the loop bump is disposed between the first and second substrates, and surrounds the movable portion,
wherein the loop bump is electrically coupled with the first loop layer so that the loop bump, the first loop layer, the first layer and the second substrate shield the electric device and the physical quantity sensor,
wherein the first substrate further includes and inner pad, and outer pad, and wire layer,
wherein the inner pad is disposed inside of the first loop layer, and the outer pad is disposed outside of the first loop layer,
wherein the inner pad is electrically coupled with the outer pad through the wire layer so that a signal from the movable portion is output to and external circuit, and
wherein the wire layer is electrically insulated from the loop bump with an insulation film.

### Claim 6 (depends on 5)

The device according to claim 5,
wherein the first layer is grounded.

### Claim 7 (depends on 5)

The device according to claim 5,
wherein the one of the electric device and the physical quantity sensor is disposed in the third layer of the first substrate,
wherein the other one of the electric device and the physical quantity sensor is disposed one side of the second substrate, and
wherein the second layer of the first substrate is made of and insulation layer so that the first and third layers are electrically isolated.

### Claim 8 (depends on 7)

The device according to claim 7,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs the signal corresponding to a displacement of the movable portion, and
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor.

### Claim 9 (depends on 8)

The device according to claim 8,
wherein the first substrate includes a bump disposed on the third layer of the first substrate,
wherein the third layer of the first substrate faces the second substrate so that the first substrate is electrically connected to the second substrate through the bump, and
wherein the first layer of the first substrate and the other side of the second substrate are disposed outside, the other side of the second substrate being opposite to the other one of the electric device and the physical quantity sensor.

### Claim 10 (depends on 9)

The device according to claim 9,
wherein the first and third layers of the first substrate are made of semiconductor,
wherein the second substrate is made of semiconductor, and
wherein the electric device controls the physical quantity sensor, and the physical quantity sensor outputs the signal to the electric device though the bump.

### Claim 11 (depends on 10)

The device according to claim 10,
wherein the physical quantity sensor is an acceleration sensor, an angular rate sensor or a pressure sensor,
wherein the first substrate is provided by a silicon-on-insulator substrate, and
wherein the electric device is a signal processor.

### Claim 12

A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate;
a loop bump; and
a bump,
wherein the first substrate provides one of an electric device and a physical quantity sensor,
wherein the second substrate provides the other one of the electric device and the physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the one of the electric device and the physical quantity sensor is disposed in the third layer of the first substrate,
wherein the other one of the electric device and the physical quantity sensor is disposed in one side of the second substrate,
wherein the second layer of the first substrate is made of an insulation layer so that the first and third layers are electrically isolated,
wherein the physical quantity sensor includes a movable portion,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs a signal corresponding to a displacement of the movable portion,
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor,
wherein the bump is disposed between the third layer of the first substrate and the one side of the second substrate,
wherein the third layer of the first substrate faces the second substrate so that the first substrate is electrically connected to the second substrate through the bump,
wherein the first layer of the first substrate and the other side of the second substrate are disposed outside the other side of the second substrate being opposite to the other one of the electric device and the physical quantity sensor,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion,
wherein the loop bump is disposed between the first and second substrates, and surrounds the movable portion,
wherein the loop bump is electrically coupled with the first loop layer so that the loop bump, the first loop layer, the first layer and the second substrate shield the electric device and the physical quantity sensor,
wherein the first substrate further includes an inner pad, an outer pad and a wire layer,
wherein the inner pad is disposed inside of the first loop layer, and the outer pad is disposed outside of the first loop layer,
wherein the inner pad is electrically coupled with the outer pad through the wire layer so that the signal from the movable portion is output to an external circuit, and
wherein the wire layer is electrically insulated from the loop bump with an insulation film.

### Claim 13 (depends on 5)

The device according to claim 5,
wherein the second layer of the first substrate is an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein one side of the second substrate faces the third layer of the first substrate,
wherein the movable portion of the physical quantity sensor is provided by the one side of the second substrate so tat the movable portion is sandwiched by the first and second substrates,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with the loop bump so that the movable portion is shielded.

### Claim 14 (depends on 13)

The device according to claim 13,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the loop bump.

### Claim 15 (depends on 12)

The device according to claim 12,
wherein the first substrate is provided by a silicon-on-insulator substrate,
wherein the one side of the second substrate faces the third layer of the first substrate,
wherein the movable portion of the physical quantity sensor is provided by the one side of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with the loop bump so that the movable portion is shielded.

### Claim 16 (depends on 15)

The device according to claim 15,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the loop bump.

### Claim 17

A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate; and
a loop bump,
wherein the first substrate provides one of an electric device and a physical quantity sensor,
wherein the second substrate provides the other one of the electric device and the physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the physical quantity sensor includes a movable portion,
wherein the loop bump is disposed between the first and second substrates, and surrounds the movable portion,
wherein the first substrate further includes an inner pad, an outer pad and a wire layer,
wherein the inner pad is disposed inside of the loop bump, and the outer pad is disposed outside of the loop bump,
wherein the inner pad is electrically coupled with the outer pad through the wire layer, and
wherein the wire layer is electrically insulated from the loop bump with an insulation film.

### Claim 18 (depends on 17)

The device according to claim 17,
wherein the first layer is grounded.

### Claim 19 (depends on 17)

The device according to claim 17,
wherein the one of the electric device and the physical quantity sensor is disposed in the third layer of the first substrate,
wherein the other one of the electric device and the physical quantity sensor is disposed one side of the second substrate, and
wherein the second layer of the first substrate is made of an insulation layer so that the first and third layers are electrically isolated.

### Claim 20 (depends on 19)

The device according to claim 19,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs the signal corresponding to a displacement of the movable portion, and
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor.

### Claim 21 (depends on 20)

The device according to claim 20,
wherein the first substrate includes a bump disposed on the third layer of the first substrate,
wherein the third layer of the first substrate faces the second substrate so that the first substrate is electrically connected to the second substrate through the bump, and
wherein the first layer of the first substrate and the other side of the second substrate are disposed outside, the other side of the second substrate being opposite to the other one of the electric device and the physical quantity sensor.

### Claim 22 (depends on 21)

The device according to claim 21,
wherein the first and third layers of the first substrate are made of semiconductor,
wherein the second substrate is made of semiconductor, and
wherein the electric device controls the physical quantity sensor, and the physical quantity sensor outputs the signal to the electric device through the bump.

### Claim 23 (depends on 22)

The device according to claim 22,
wherein the physical quantity sensor is an acceleration sensor, an angular rate sensor or a pressure sensor,
wherein the first substrate is provided by a silicon-on-insulator substrate, and
wherein the electric device is a signal processor.

### Claim 24 (depends on 17)

The device according to claim 17,
wherein the second layer of the first substrate is an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein one side of the second substrate faces the third layer of the first substrate,
wherein the movable portion of the physical quantity sensor is provided by the one side of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with the loop bump so that the movable portion is shielded.

### Claim 25 (depends on 24)

The device according to claim 24,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth Layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the loop bump.