# US 7,465,972 B2 · High performance CMOS device design

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- Number: US 7,465,972 B2
- Document ID: US7465972B2
- Status: Granted
- Kind: B2
- Application number: 11/115,484
- Filed: 2005-04-27
- Published: 2006-07-27
- Granted: 2008-12-16
- Earliest claimed: 2005-01-21
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Chih-Hao Wang; Shang-Chih Chen; Ching-Wei Tsai; Ta-Wei Wang; Pang-Yen Tsai
- Web page: https://patentgrep.com/patent/US7465972B2

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 30/751: {having composition variations in the channel regions}
- H10D 30/798: {being provided in or under the channel regions}
- H10D 62/021: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling}
- H10D 64/018: {Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second portion adjacent the spacer wherein the top surface of the second portion of the buffer layer is recessed below the top surface of the first portion of the buffer layer, and a source/drain region substantially aligned with the spacer. The buffer layer preferably has a greater lattice constant than an underlying semiconductor substrate. The semiconductor device may further include a semiconductor-capping layer between the buffer layer and the gate dielectric, wherein the semiconductor-capping layer has a smaller lattice constant then the buffer layer.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate;
a gate structure comprising a gate electrode over a gate dielectric, the gate dielectric being over the semiconductor substrate;
a spacer along a side wall of the gate structure;
a buffer layer overlying the semiconductor substrate, wherein the buffer layer and the semiconductor substrate comprise different materials;
a semiconductor-capping layer overlying the buffer layer and underlying the gate structure;
an insulation region in the semiconductor-capping layer, the buffer layer and the semiconductor substrate, wherein the insulation region is adjacent and spaced apart from an outer sidewall of the spacer; and
a recess extending from a top surface down to a bottom surface of the semiconductor-capping layer, wherein the recess has an inner sidewall and an outer sidewall, wherein the outer sidewall of the recess is spaced apart from an inner edge of the insulation region, and wherein the inner sidewall of the recess and the outer sidewall of the spacer are substantially in a same plane.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the top surface of the source/drain region is lower than a bottom surface of the buffer layer.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the buffer layer does not extend beyond the spacer.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the recess extends below a top surface of the buffer layer.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein a bottom surface of the spacer is below an interface between the semiconductor-capping layer and the gate dielectric.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the buffer layer and the semiconductor-capping layer comprise silicon germanium, and wherein the buffer layer has a greater germanium concentration than the semiconductor-capping layer.