# US 7,465,966 B2 · Film formation method and manufacturing method of semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,465,966 B2 - Document ID: US7465966B2 - Status: Granted - Kind: B2 - Application number: 10/804,053 - Filed: 2004-03-19 - Published: 2004-09-23 - Granted: 2008-12-16 - Earliest claimed: 2003-03-19 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Mitsuhiro Ichijo; Taketomi Asami; Kunihiko Fukuchi; Satoshi Toriumi - Web page: https://patentgrep.com/patent/US7465966B2 ## CPC - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A new film formation method that makes it possible to form a film with a little concentration of contaminants from a material and to form a film on a low heat-resistant member is proposed. Further, a method for forming a film that can keep semiconductor properties is proposed. In the film formation method of the present invention, a first film that is to be a target is formed by employing plasma CVD, and the first film is sputtered, thereby forming the second film on a surface of the substrate to be processed in one chamber. By employing the film formation method of the present invention for a protective film of a semiconductor element, deterioration of a semiconductor device can be controlled. ## Claims ### Claim 1 A film formation method comprising the steps of: forming a first film on an electrode provided in a chamber by a CVD method using a first gas; installing a substrate into the chamber after forming the first film; and forming a second film over a surface of the substrate by a sputtering method using the first film as a target and a second gas in the chamber. ### Claim 2 (depends on 1) A film formation method according to claim 1, wherein the second film is formed at a pressure of 20 Pa or less. ### Claim 3 (depends on 1) A film formation method according to claim 1, wherein the second film is formed over one selected from the group consisting of a glass substrate, a plastic substrate, and an organic resin film. ### Claim 4 (depends on 1) A film formation method according to claim 1, wherein a semiconductor device is manufactured by using the second film as a protective film of a semiconductor element. ### Claim 5 (depends on 4) A film formation method according to claim 4, wherein the semiconductor element comprises at least one selected from the group consisting of a thin film transistor, an organic thin film transistor, a thin film diode, a photoelectric conversion element, and a resistor. ### Claim 6 A film formation method comprising the steps of: forming a first film on an electrode provided in a chamber by a CVD method using a first gas; installing a substrate into the chamber after forming the first film; and forming a silicon nitride film over a surface of the substrate by a sputtering method using the first film as a target and a second gas in the chamber. ### Claim 7 (depends on 6) A film formation method according to claim 6, wherein the first gas comprises a silicide gas and nitrogen. ### Claim 8 (depends on 6) A film formation method according to claim 6, wherein the second gas comprises at least one selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe). ### Claim 9 (depends on 6) A film formation method according to claim 6, wherein the silicon nitride film is formed at a pressure of 20 Pa or less. ### Claim 10 (depends on 6) A film formation method according to claim 6, wherein the second film is formed over one selected from the group consisting of a glass substrate, a plastic substrate, and an organic resin film. ### Claim 11 (depends on 7) A film formation method according to claim 7, wherein the silicide gas comprises at least one selected from the group consisting of monosilane, disilane, and trisilane. ### Claim 12 (depends on 6) A film formation method according to claim 6, wherein a semiconductor device is manufactured by using the silicon nitride film as a protective film of a semiconductor element. ### Claim 13 (depends on 12) A film formation method according to claim 12, wherein the semiconductor element comprises at least one selected from the group consisting of a thin film transistor, an organic thin film transistor, a thin film diode, a photoelectric conversion element, and a resistor. ### Claim 14 A method for manufacturing a semiconductor device comprising: forming a thin film transistor over a substrate, wherein the thin film transistor comprises an active region and a gate electrode with a gate insulating film interposed therebetween; forming a first film on an electrode provided in a chamber by a CVD method using a first gas; installing the substrate into the chamber after forming the first film; and forming a second film over the thin film transistor by a sputtering method using the first film as a target and a second gas in the chamber. ### Claim 15 (depends on 14) A method for manufacturing a semiconductor device according to claim 14, wherein the second film is formed at a pressure of 20 Pa or less. ### Claim 16 (depends on 14) A method for manufacturing a semiconductor device according to claim 14, wherein the substrate comprises at least one selected from the group consisting of a glass substrate, a plastic substrate, and an organic resin film. ### Claim 17 (depends on 14) A method for manufacturing a semiconductor device according to claim 14, further comprising a step of forming an EL layer and an electrode over the second film. ### Claim 18 A method for manufacturing a semiconductor device comprising: forming a thin film transistor over a substrate, wherein the thin film transistor comprises an active region and a gate electrode with a gate insulating film interposed therebetween; forming a first film on an electrode provided in a chamber by a CVD method using a first gas; installing the substrate into the chamber after forming the first film; and forming a silicon nitride film over the thin film transistor by a sputtering method using the first film as a target and a second gas in the chamber. ### Claim 19 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the first gas comprises a silicide gas and nitrogen. ### Claim 20 (depends on 19) A method for manufacturing a semiconductor device according to claim 19, wherein the silicide gas comprises at least one selected from the group consisting of monosilane, disilane, and trisilane. ### Claim 21 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the second gas comprises at least one selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe). ### Claim 22 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the second film is formed at a pressure of 20 Pa or less. ### Claim 23 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the substrate comprises at least one selected from the group consisting of a glass substrate, a plastic substrate, and an organic resin film. ### Claim 24 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, further comprising a step of forming an EL layer and an electrode over the second film. ### Claim 25 A film formation method comprising the steps of: forming a first film on an electrode provided in a chamber by a CVD method using a first gas; installing a substrate into the chamber after forming the first film; and forming a silicon nitride film over a surface of the substrate by a sputtering method using the first film as a target and a second gas in the chamber. ### Claim 26 (depends on 25) A film formation method according to claim 25, wherein the first gas comprises a silicide gas and nitrogen. ### Claim 27 (depends on 25) A film formation method according to claim 25, wherein the second gas comprises at least one selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe). ### Claim 28 (depends on 25) A film formation method according to claim 25, wherein the silicon nitride film is formed at a pressure of 20 Pa or less. ### Claim 29 (depends on 25) A film formation method according to claim 25, wherein the silicon nitride film is formed over one selected from the group consisting of a glass substrate, a plastic substrate, and an organic resin film. ### Claim 30 (depends on 26) A film formation method according to claim 26, wherein the silicide gas comprises at least one selected from the group consisting of monosilane, disilane, and trisilane. ### Claim 31 (depends on 25) A film formation method according to claim 25, wherein a semiconductor device is manufactured by using the silicon nitride film as a protective film of a semiconductor element. ### Claim 32 (depends on 31) A film formation method according to claim 31, wherein the semiconductor element comprises at least one selected from the group consisting of a thin film transistor, an organic thin film transistor, a thin film diode, a photoelectric conversion element, and a resistor. ### Claim 33 A method for manufacturing a semiconductor device comprising: forming a thin film transistor over a substrate, wherein the thin film transistor comprises an active region and a gate electrode with a gate insulating film interposed therebetween; forming a first film on an electrode provided in a chamber by a CVD method using a first gas; installing the substrate into the chamber after forming the first film; and forming a second film over the thin film transistor by a sputtering method using the first film as a target and a second gas in the chamber. ### Claim 34 (depends on 33) A method for manufacturing a semiconductor device according to claim 33, wherein the first gas comprises a silicide gas and nitrogen. ### Claim 35 (depends on 33) A method for manufacturing a semiconductor device according to claim 33, wherein the second gas comprises at least one selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe). ### Claim 36 (depends on 33) A method for manufacturing a semiconductor device according to claim 33, wherein the second film is formed at a pressure of 20 Pa or less. ### Claim 37 (depends on 33) A method for manufacturing a semiconductor device according to claim 33, wherein the second film is formed over one selected from the group consisting of a glass substrate, a plastic substrate, and an organic resin film. ### Claim 38 (depends on 34) A method for manufacturing a semiconductor device according to claim 34, wherein the suicide gas comprises at least one selected from the group consisting of monosilane, disilane, and trisilane. ### Claim 39 (depends on 33) A method for manufacturing a semiconductor device according to claim 33, further comprising a step of forming an EL layer and an electrode over the second film. ### Claim 40 (depends on 1) A film formation method according to claim 1, wherein the sputtering method is a sputtering method using a magnetron discharge. ### Claim 41 (depends on 6) A film formation method according to claim 6, wherein the sputtering method is a sputtering method using a magnetron discharge. ### Claim 42 (depends on 14) A method for manufacturing a semiconductor device according to claim 14, wherein the sputtering method is a sputtering method using a magnetron discharge. ### Claim 43 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the sputtering method is a sputtering method using a magnetron discharge. ### Claim 44 (depends on 25) A film formation method according to claim 25, wherein the sputtering method is a sputtering method using a magnetron discharge. ### Claim 45 (depends on 33) A method for manufacturing a semiconductor device according to claim 33, wherein the sputtering method is a sputtering method using a magnetron discharge.