Positioning of nanoparticles and fabrication of single election devices

A method for fabricating a single electron structure comprising the steps of:

• providing a substrate having an upper surface;
• forming a first dielectric layer on the upper surface of the substrate;
• depositing and defining a second dielectric layer in contact with the first dielectric layer, wherein the second dielectric layer is defined by an exposed portion and is a different material than the first dielectric layer;
• forming and defining a third dielectric layer in contact with the second dielectric layer, wherein the third dielectric layer is a different material than the second dielectric layer;
• having a monolayer of self-assembling molecules that selectively form on the exposed portion of the second dielectric layer;
• providing one or more nanoparticles that contact the self-assembling molecules thereby providing a single electron structure exhibiting single electron behavior.

A single electron structure comprising:

• a substrate having an upper surface;
• a first dielectric layer formed on the upper surface of the substrate;
• a second dielectric layer defined with exposed portions and deposited on the first dielectric layer and of a different material than the first dielectric layer;
• a third dielectric layer defined and in contact with the second dielectric and of a different material than the second dielectric layer;
• at least one self-assembled monolayer attracted to and in contact with exposed portions of the second dielectric layer;
• one or more nanoparticles attracted to and in contact with the at least one self-assembled monolayer thereby providing a single electron memory device exhibiting single electron memory behavior.

A single electron structure comprising:

• a substrate having an upper surface;
• one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion;
• at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers;
• one or more nanoparticles attracted to and in contact with the at least one monolayer;
• at least one tunneling barrier in contact with the one or more nanoparticles to provide single electron behavior.

A single electron structure comprising:

• a substrate having an upper surface;
• one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion;
• at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers;
• and
• one or more nanoparticles attracted to and in contact with the at least one monolayer;
• a drain, a gate and a source to provide single electron behavior.