# US 7,465,662 B2 · Method of making semiconductor device

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- Number: US 7,465,662 B2
- Document ID: US7465662B2
- Status: Granted
- Kind: B2
- Application number: 11/907,438
- Filed: 2007-10-12
- Published: 2008-02-21
- Granted: 2008-12-16
- Earliest claimed: 2004-09-22
- Assignees: Renesas Technology Corp.
- Inventors: Katsuhiro Uesugi; Katsuo Katayama; Katsuhisa Sakai
- Web page: https://patentgrep.com/patent/US7465662B2

## CPC

- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/074: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device is manufactured by a method including forming a first interlayer insulating film. A first etching stopper film is formed on the first interlayer insulating film. A conductive layer is formed on the first etching stopper film. A second etching stopper film is formed to cover the conductive layer, an upper surface of the conductive layer and both side surfaces of the conductive layer. A second interlayer insulating film is formed on the second etching stopper film. A hole is formed penetrating the second interlayer insulating film in a direction of thickness and reaching the conductive layer. An interconnect is formed in the hole. The step of forming a hole includes etching the second interlayer insulating film under a first etching condition, and etching the second etching stopper film under a second etching condition different from the first etching condition.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising the steps of:
forming a first interlayer insulating film;
forming a first etching stopper film on said first interlayer insulating film;
forming a conductive layer on said first etching stopper film;
forming a second etching stopper film to cover said first etching stopper film, an upper surface of said conductive layer and both side surfaces of said conductive layer;
forming a second interlayer insulating film on said second etching stopper film;
forming a hole penetrating said second interlayer insulating film in a direction of thickness and reaching said conductive layer; and
forming an interconnection in said hole; wherein
said step of forming a hole includes the steps of
etching said second interlayer insulating film under a first etching condition, and
etching said second etching stopper film under a second etching condition different from said first etching condition.

### Claim 2 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein
each of said first etching stopper film and said second etching stopper film includes any one of a silicon nitride film and a silicon rich oxide (SRO) film.