# US 7,465,594 B2 · Active-matrix addressing substrate and method of fabricating the same

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- Number: US 7,465,594 B2
- Document ID: US7465594B2
- Status: Granted
- Kind: B2
- Application number: 11/435,031
- Filed: 2006-05-17
- Published: 2006-12-21
- Granted: 2008-12-16
- Earliest claimed: 2005-06-17
- Assignees: NEC LCD Technologies, Ltd.
- Inventors: Takayuki Konno
- Web page: https://patentgrep.com/patent/US7465594B2

## CPC

- G02F 1/134363: {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]}
- G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

An active-matrix addressing substrate improves the degradation of initial alignment of liquid-crystal molecules caused by the steps or level differences due to the pixel electrodes and/or the common electrode. The pixel electrodes are formed on or over the first insulating layer and the common electrode is formed on the second or third insulating layer. The second insulating layer has steps or level differences due to the pixel electrodes in their vicinities. The second insulating layer is made of a dielectric material having fluidity prior to hardening, e.g., an acrylic resin. The steps of the second insulating layer are relaxed, resulting in the gently sloping steps. The steps of an overlying alignment layer due to the common electrode slope gently as well. The thickness of the pixel electrodes, the thickness and inclination angle of the second insulating layer, and the thicknesses of the pixel and common electrodes are defined.

## Claims

### Claim 1

A method of fabricating an active-matrix addressing substrate, comprising:
forming scanning signal lines and common signal lines one of on and over a transparent plate;
forming a first insulating layer one of on and over the plate to cover the scanning signal lines and common signal lines;
forming image signal lines and pixel electrodes on the first insulating layer;
forming a second insulating layer on the first insulating layer by depositing a dielectric material having fluidity prior to hardening to cover the image signal lines and the pixel electrodes, said second insulating layer comprising gently sloping steps;
forming a patterned third insulating layer on the second insulating layer to selectively cover the image signal lines; and
forming a common electrode on the third insulating layer.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the dielectric material having fluidity prior to hardening comprises an acrylic resin.

### Claim 3

A method of fabricating an active-matrix addressing substrate, comprising:
forming scanning signal lines, common signal lines, and light-shielding electrodes one of on and over a transparent plate;
forming a first insulating layer one of on and over the plate to cover the scanning signal lines, the common signal lines, and the light-shielding electrodes;
forming image signal lines one of on and in the first insulating layer to be overlapped to correspond with the light-shielding electrodes;
forming pixel electrodes on the first insulating layer;
forming a second insulating layer on the first insulating layer by depositing a dielectric material having fluidity prior to hardening to cover the image signal lines, the pixel electrodes, and the light-shielding electrodes, said second insulating layer comprising gently sloping steps;
forming a patterned third insulating layer on the second insulating layer to selectively cover the image signal lines; and
forming a common electrode on the third insulating layer.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the dielectric material having fluidity prior to hardening comprises an acrylic resin.

### Claim 5 (depends on 1)

The method according to claim 1, wherein one of a flat position and an even position of said second insulating layer is approximately equal in thickness to the pixel electrodes, and
wherein one of the flat position and the even position of the second insulating layer comprises a thickness of approximately 300 nm or less.

### Claim 6 (depends on 1)

The method according to claim 1, wherein one of a flat position and an even position of said second insulating layer is approximately equal in thickness to the pixel electrodes, and
wherein the second insulating layer comprises an inclination angle of approximately 30° or less near respective portions of the pixel electrodes.