# US 7,465,527 B2 · Resist material, resist pattern and forming method for the same, and a semiconductor device and manufacturing method for the same

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- Number: US 7,465,527 B2
- Document ID: US7465527B2
- Status: Granted
- Kind: B2
- Application number: 10/107,203
- Filed: 2002-03-28
- Published: 2003-05-29
- Granted: 2008-12-16
- Earliest claimed: 2001-11-27
- Assignees: Fujitsu Limited
- Inventors: Junichi Kon; Ei Yano
- Web page: https://patentgrep.com/patent/US7465527B2

## CPC

- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- Y10S 430/114: Initiator containing
- Y10S 430/115: Cationic or anionic
- Y10S 430/12: Nitrogen compound containing
- Y10S 430/121: Nitrogen in heterocyclic ring
- Y10S 430/122: Sulfur compound containing
- Y10S 430/128: Radiation-activated cross-linking agent containing
- Y10S 430/143: Electron beam
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.

## Claims

### Claim 1

A resist material comprising:
a) a first photo-acid generator exhibiting an absorption peak to exposure light having a wavelength of less than 300 nm, wherein the first photo-acid generator is an onium salt compound expressed by (R1)+X−, where X− is an anion, and (R1)+ is selected from the group consisting of the compounds expressed by formulae below:
wherein R2 represents a substituent group;
b) a second photo-acid generator exhibiting an absorption peak to exposure light having a wavelength of 300 nm or more, wherein the second photo-acid generator is selected from the group consisting of the compounds expressed by formulae below,
; and
c) a resin of a polarity changeable type, wherein 5-80% of all polar groups in the resin are substituted by a protective group, wherein the protective group is eliminated by an acid resulting from the first and second photo-acid generators, and wherein the protective group is a hydrophobic protective group which is an adamantyl or norbornane functional group expressed by the formula below,
where “R1” represents a straight chain, branched or cyclic alkyl group having 1 to 4 carbon atoms, which may be substituted or non-substituted, and “Z” represents a plurality of atoms which forms one of a substituted or non-substituted adamantyl group and a substituted or non-substituted norbornane functional group,
wherein the resist material is a positive resist material.

### Claim 2 (depends on 1)

A resist material according to claim 1, wherein, in the first photo-acid generator, number of molecules which react to exposure light having a wavelength of 300 nm or more, is ⅕ of the number of molecules which react to exposure light having a wavelength of less than 300 nm, and in the second photo-acid generator, the number of molecules which react to exposure light having a wavelength of less than 300 nm, is ⅕ of the number of molecules which react to exposure light having a wavelength of 300 nm or more.

### Claim 3 (depends on 1)

A resist material according to claim 1, wherein the exposure light having a wavelength of 300 nm or more is ultraviolet light, and the exposure light having a wavelength of less than 300 nm is a charged particle beam.

### Claim 4 (depends on 1)

A resist material according to claim 1, wherein if the resin is a copolymer, the resin has crosslinking rate of 5-80%.

### Claim 5 (depends on 1)

A resist material according to claim 1, wherein the resin contains at least one type selected from a (meth)acrylate ester polymer, vinylphenol polymer, N-substituted maleimide polymer and styrene polymer.

### Claim 6 (depends on 1)

A resist material according to claim 1, wherein the absorption in an ultraviolet wavelength region is 1.75 or less.

### Claim 7 (depends on 1)

A resist material according to claim 1, wherein the resist material is used in forming a pattern having an opening diameter of 0.2 μm or less.

### Claim 8 (depends on 1)

A resist material according to claim 1, wherein the resist material is used in a manufacturing of a high electron mobility transistor device.