# US 7,465,525 B2 · Reticle alignment and overlay for multiple reticle process

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- Number: US 7,465,525 B2
- Document ID: US7465525B2
- Status: Granted
- Kind: B2
- Application number: 11/126,466
- Filed: 2005-05-10
- Published: 2006-11-16
- Granted: 2008-12-16
- Earliest claimed: 2005-05-10
- Assignees: Lam Research Corporation
- Inventors: S. M. Reza Sadjadi; Nicolas Bright
- Web page: https://patentgrep.com/patent/US7465525B2

## CPC

- H10P 76/4088: {Processes for improving the resolution of the masks}
- G03F 7/70433: {Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors}
- G03F 7/70466: {Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A method for generating a plurality of reticle layouts is provided. A feature layout with a feature layout pitch is received. A plurality of reticle layouts is generated from the feature layout where each reticle layout of the plurality of reticle layouts has a reticle layout pitch and where each reticle layout pitch is at least twice the feature layout pitch.

## Claims

### Claim 1

A method, comprising:
receiving a feature layout with a feature layout pitch; and
generating a plurality of reticle layouts from the feature layout wherein each reticle layout of the plurality of reticle layouts has a reticle layout pitch and wherein each reticle layout pitch is at least twice the feature layout pitch, wherein a first reticle layout of the plurality of reticle layouts comprises a first alignment mark and wherein a second reticle layout of the plurality of reticle layouts comprises a first alignment mark to match the first alignment mark of the first reticle layout and a second alignment mark which is not matched by the first reticle layout.

### Claim 2 (depends on 1)

The method, as recited in claim 1, further comprising performing a shrink control on each of the plurality of reticle layouts.

### Claim 3 (depends on 2)

The method, as recited in claim 2, further comprising generating a plurality of reticles from the plurality of reticle layouts after shrink control is performed.

### Claim 4 (depends on 3)

The method, as recited in claim 3, further comprising:
using a first reticle of the plurality of reticles to form a first patterned layer over a substrate;
forming a sidewall layer over the first patterned layer;
etching a first set of features into the substrate through the first patterned layer and sidewall layer;
using a second reticle of the plurality of reticles to form a second patterned layer over the substrate with the first set of etched features;
forming a sidewall layer over the second patterned layer; and
etching a second set of features into the substrate through the second patterned layer and sidewall layer.

### Claim 5

The method, as recited in 4, wherein the first set of features are etched to a same depth as the second set of features.

### Claim 6 (depends on 5)

The method, as recited in claim 5, wherein the first alignment mark of the first reticle layout is used to form a first alignment mark in the first reticle and the first alignment mark and the second alignment mark of the second reticle layout is used to form a first alignment mark and a second alignment mark in the second reticle.

### Claim 7 (depends on 6)

The method, as recited in claim 6, wherein the forming a sidewall layer reduces a CD of the first patterned layer by at least 50%.

### Claim 8 (depends on 7)

The method, as recited in claim 7, wherein the forming a sidewall layer reduces a CD of the second patterned by at least 50%.

### Claim 9 (depends on 1)

The method, as recited in claim 1, further comprising performing a shrink control on each of the plurality of reticle layouts.

### Claim 10 (depends on 1)

The method, as recited in claim 1, further comprising generating a plurality of reticles from the plurality of reticle layouts.

### Claim 11 (depends on 10)

The method, as recited in claim 10, further comprising:
using a first reticle of the plurality of reticles to form a first patterned layer over a substrate;
forming a sidewall layer over the first patterned layer;
etching a first set of features into the substrate through the first patterned layer and sidewall layer;
using a second reticle of the plurality of reticles to form a second patterned layer over the substrate with the first set of etched features;
forming a sidewall layer over the second patterned layer; and
etching a second set of features into the substrate through the second patterned layer and sidewall layer.

### Claim 12 (depends on 11)

The method, as recited in claim 11, wherein the forming a sidewall layer reduces a CD of the first patterned layer by at least 50% and wherein the forming a sidewall layer reduces a CD of the second patterned layer by at least 50%.

### Claim 13

The method, as recited in 11, wherein the first set of features are etched to a same depth as the second set of features and wherein the performing the shrink correction provides for eliminating different requirements for the isolated and dense features.

### Claim 14 (depends on 1)

A semiconductor formed by the method as recited in claim 1.

### Claim 15 (depends on 1)

The method, as recited in claim 1, wherein a first reticle layout of the plurality of reticle layouts comprises a first alignment mark and wherein a second reticle layout of the plurality of reticle layouts comprises a first alignment mark to match the first alignment mark of the first reticle layout and a second alignment mark which is not matched by the first reticle layout, so that the first mark of the second reticle layout will be aligned to the first mark of the first reticle layout, and where the second alignment mark of the second reticle layout is for alignment to another layer.

### Claim 16

An apparatus comprising computer readable media comprising:
computer readable code for receiving a feature layout with a feature layout pitch; and
computer readable code for generating a plurality of reticle layouts from the feature layout, wherein each reticle layout of the plurality of reticle layouts has a reticle layout pitch and wherein each reticle layout pitch is at least twice the feature layout pitch, wherein a first reticle layout of the plurality of reticle layouts comprises a first alignment mark and wherein a second reticle layout of the plurality of reticle layouts comprises a first alignment mark to match the first alignment mark of the first reticle layout and a second alignment mark which is not matched by the first reticle layout.

### Claim 17 (depends on 16)

The apparatus, as recited in claim 16, further comprising computer readable code for performing a shrink control on each of the plurality of reticle layouts.