# US 7,464,702 B2 · Method of producing III-nitride substrate

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- Number: US 7,464,702 B2
- Document ID: US7464702B2
- Status: Granted
- Kind: B2
- Application number: 11/646,397
- Filed: 2006-12-28
- Published: 2007-05-10
- Granted: 2008-12-16
- Earliest claimed: 2005-01-07
- Assignees: Sumitomo Electric Industries, Ltd.
- Inventors: Naoki Matsumoto
- Web page: https://patentgrep.com/patent/US7464702B2

## CPC

- H10P 90/14: {by setting crystal orientation}
- B28D 5/045: {by cutting with wires or closed-loop blades (B28D5/042 takes precedence)}
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C30B 29/403: {AIII-nitrides}
- C30B 29/406: {Gallium nitride}
- C30B 33/00: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 50/00: Etching of wafers, substrates or parts of devices
- Y10T 83/9292: Wire tool
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B28D: WORKING STONE OR STONE-LIKE MATERIALS
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.

## Claims

### Claim 1

A method of producing a III-nitride substrate by cutting an ingot of a hexagonal III-nitride crystal, using a wire array, comprising:
a step of cutting the ingot with supply of an abrasive fluid, while feeding at least one of the ingot and the wire array in a direction intersecting with an extending direction of a wire in the wire array,
wherein during cutting the ingot, the extending direction of the wire in the wire array is inclined at 3° or more to the {1-100} plane of the ingot and is set parallel to the {0001} plane of the ingot, and a down cut method to feed the ingot from top to the wire array is used.

### Claim 2

A method of producing a III-nitride substrate by cutting an ingot of a hexagonal III-nitride crystal, using a wire array, comprising:
a step of cutting the ingot with supply of an abrasive fluid, while feeding at least one of the ingot and the wire array in a direction intersecting with an extending direction of a wire in the wire array,
wherein during cutting the ingot, the extending direction of the wire in the wire array is inclined at 3° or more to the {1-100} plane of the ingot and is set parallel to the {0001} plane of the ingot, and either one of the ingot and guide rollers is swung.

### Claim 3

A method of producing a III-nitride substrate by cutting an ingot of a hexagonal III-nitride crystal, using a wire array, comprising:
a step of cutting the ingot with supply of an abrasive fluid, while feeding at least one of the ingot and the wire array in a direction intersecting with an extending direction of a wire in the wire array,
wherein during cutting the ingot, the extending direction of the wire in the wire array is inclined at 3° or more to the {1-100} plane of the ingot and is set parallel to the {0001} plane of the ingot, and tension of the wire is set from 12N to 30N.