Floating gate field effect transistors for chemical and/or biological sensing
AssigneePolytechnic University
InventorsKalle Levon, Arifur Rahman, Tsunehiro Sai, Ben Zhao
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Abstract
Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.
Claims7
A method for fabricating a floating gate field effect transistor, the method comprising:
- a) fabricating a floating gate field effect transistor using a 2-polysilicon and 2-metal layer 1.2 μm (or micron) process technology, wherein a floating gate is electrically coupled with a receptor on a second metal layer;
- b) encapsulating the second metal layer in glass;
- c) removing some of the glass to
- i) expose bonding pads on the second metal layer to create bond wire connections for packaging, and
- ii) expose at least a portion of the second metal layer;
- and
- d) immobilizing a ligand to the exposed portion of the second metal layer, wherein the act of immobilizing includes spin coating the exposed portion of the second metal layer with ion-sensitive material.
Dependencies are inferred from the claim text.