Nonvolatile semiconductor storing device and block redundancy saving method

A nonvolatile semiconductor storing device comprising:

• a memory array including a plurality of memory blocks that consists of nonvolatile memory cells arranged in the form of an array in which program and erase operations can be electrically performed and can be erased in block and a redundant block having the same number of memory cells and the same constitution as that of one of the memory blocks;
• and
• a block replacing means for replacing a defective block with the redundant block in a case where one of the memory blocks in the memory array is the defective block, wherein
• the block replacing means includes an address translation circuit for converting an inputted external block address into an internal block address by inverting an address bit corresponding to dissidence of each address bit between a defective block address of the defective block and the redundant block address among address bits of the inputted external block address, and
• each of the memory blocks is selected based on the internal block address after the translation of the external block address inputted from outside by the address translation circuit.