Semiconductor memory device for stack package and read data skew control method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-chang Jung, Hi-choon Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device and a read data skew control method thereof, in which a point of time when read data is output can he controlled using pad bonding in stack packages. The semiconductor memory device includes a bonding option pad and a delay control circuit that controls the point of time when data is output from an output buffer depending on logic states of a signal applied to the bonding option pad. Thus, when using the semiconductor memory device in stack packages, the read data skew generated as a result of a load on a bonding wire can be compensated by connecting the bonding option pad to ground voltage or a supply voltage.
Claims11
A semiconductor memory device comprising:
- an output buffer that receives read data to be output in response to an output control clock signal and outputs the read data to the exterior;
- a bonding option pad;
- and
- a delay control circuit that controls a point of time when data is output from the output buffer according to a logic state of a signal applied to the bonding option pad.
A read data skew control method in a semiconductor memory device including an output buffer and a bonding option pad, the method comprising:
- outputting read data from the output buffer locked with an external clock signal when a logic state of a signal applied to the bonding option pad is at a first logic level;
- and
- changing the point of time when data is output and outputting the read data when the logic state of the signal applied to the bonding option pad is at a second logic level.
Dependencies are inferred from the claim text.