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US 7,460,209 B2Granted
Advanced mask patterning with patterning layer
AssigneeIntel Corporation
InventorsJian Ma, Phil Freiberger, Karmen Yung, Frederick Chen, Chaoyang Li, Steve Mak
Life of this patent
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Abstract
An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer.
Claims9
A lithography system comprising:
- a source of imaging light including light of an imaging wavelength;
- an imaging structure positioned to receive the imaging light;
- and
- a substrate positioner configured to position a substrate to receive light from the imaging structure, and wherein the imaging structure comprises:
- an imaging substrate substantially transparent to light of the imaging wavelength;
- an imaging layer on the imaging substrate, the imaging layer configured to substantially block light of the imaging wavelength;
- and
- a patterning layer on the imaging layer, wherein the patterning layer has a substantially different set of etch properties than the imaging layer, wherein the patterning layer has a thickness in the range from two nanometers to twenty five nanometers and wherein the material for the patterning layer is selected from the group consisting of silicon and silicon nitride.
5 more elements
A lithography system comprising:
- a source of imaging light including light of an imaging wavelength;
- an imaging structure positioned to receive the imaging light;
- and
- a substrate positioner configured to position a substrate to receive light from the imaging structure, and wherein the imaging structure comprises:
- an imaging substrate substantially transparent to light of the imaging wavelength;
- an imaging layer on the imaging substrate, the imaging layer configured to substantially block light of the imaging wavelength;
- and
- a patterning layer on the imaging layer, wherein a selectivity of the imaging layer with respect to the patterning layer for a first etch process is at least 10:1, and wherein the material for the patterning layer is selected from the group consisting of silicon and silicon nitride.
5 more elements
A lithography system comprising:
- a source of imaging light including light of an imaging wavelength;
- an imaging structure positioned to receive the imaging light;
- and
- a substrate positioner configured to position a substrate to receive light from the imaging structure, and wherein the imaging structure comprises:
- an imaging substrate substantially transparent to light of the imaging wavelength;
- an imaging layer on the imaging substrate, the imaging layer configured to substantially block light of the imaging wavelength;
- and
- a patterning layer on the imaging layer, wherein a selectivity of the patterning layer with respect to photoresist is 10:1 or greater, and wherein the material for the patterning layer is selected from the group consisting of silicon and silicon nitride.
5 more elements
Dependencies are inferred from the claim text.