Electron emission device with multilayered insulating layers

An electron emission device comprising:

• first and second substrates facing each other with a distance therebetween;
• a first electrode, a second electrode, and a third electrode on the first substrate while being placed at different planes, respectively;
• an electron emission region electrically connected to the first electrode;
• a lower insulating layer between the first and second electrodes;
• an upper insulating layer between one of the first electrode or the second electrode and the third electrode;
• a phosphor layer on the second substrate;
• and
• an anode electrode on a surface of the phosphor layer;
• wherein the lower insulating layer has a first multiple-layered structure comprising a first layer having a first specific resistance higher than a second specific resistance and a second layer having the second specific resistance, the first layer physically contacting one of the first electrode or the second electrode, the second layer physically contacting the other one of the first electrode or the second electrode,
• wherein the upper insulating layer has a second multiple-layered structure comprising a third layer having a third specific resistance higher than a fourth specific resistance and a fourth layer having the fourth specific resistance, the third layer physically contacting one of the first electrode, the second electrode, or the third electrode,
• wherein each of the second layer of the lower insulating layer and the fourth layer of the upper insulating layer has a specific resistance from 105 to 1012Ωcm.

An electron emission device comprising:

• first and second substrates facing each other with a distance therebetween;
• a cathode electrode and a gate electrode on the first substrate at two different planes, a lower insulating layer being between the two different planes;
• an electron emission region electrically connected to the cathode electrode;
• a focusing electrode on the first substrate and over the cathode and gate electrodes, an upper insulating layer being between the focusing electrode and the cathode and gate electrodes;
• a phosphor layer on the second substrate;
• and
• an anode electrode on a surface of the phosphor layer;
• wherein the lower insulating layer has a first multiple-layered structure comprising a first layer having a first specific resistance higher than a second specific resistance and a second layer having the second specific resistance, the first layer physically contacting one of the cathode electrode or the gate electrode, the second layer physically contacting the other one of the cathode electrode or the gate electrode,
• wherein the upper insulating layer has a second multiple-layered structure comprising a third layer having a third specific resistance higher than a fourth specific resistance and a fourth layer having the fourth specific resistance, the third layer physically contacting one of the cathode electrode, the gate electrode, or the focus electrode, and
• wherein the second layer is on a surface of the first layer, and the fourth layer is on a surface of third layer, the second layer having a specific resistance from 105to 1012Ωcm, the fourth layer having a specific resistance from 105to 1012Ωcm.

An electron emission device comprising:

• first and second substrates facing each other with a distance therebetween;
• an electron emission region on the first substrate;
• a first electrode and a second electrode on the first substrate while being insulated from each other to control an electron emission of the electron emission region;
• an insulating layer between the first and second electrodes;
• an anode electrode on the second substrate;
• and
• a phosphor layer on a surface of the anode electrode;
• wherein the insulating layer has a multiple-layered structure comprising a first layer having a first specific resistance higher than a second specific resistance and a second layer having the second specific resistance, the first layer physically contacting one of the first electrode or the second electrode, and
• wherein the second layer has a specific resistance from 105to 1012 Ωcm.