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US 7,459,762 B2Granted
Programmable resistance memory element with threshold switching material
AssigneeOvonyx, Inc.
InventorsSergey A. Kostylev, Wolodymyr Czubatyj
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Abstract
A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
Claims9
An electrically programmable memory element, comprising:
- a programmable resistance material;
- a threshold switching material;
- and
- a first layer of a dielectric material of a thickness less than 100 Angstroms between said programmable resistance material and said threshold switching material, the dielectric layer thereby blocking direct contact between the programmable resistance material and the threshold switching material.
1 more element
Dependencies are inferred from the claim text.