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US 7,459,759 B2Granted
Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiaki Fukuzumi, Toshihiko Nagase
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Abstract
A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a magneto-resistive element in which a part of a vertical magnetization film as a magnetic free layer is positioned in the gap and in which a vertical magnetization film as a magnetic pinned layer is positioned outside the gap.
Claims7
A magnetic random access memory comprising:
- a conductive line which extends in a first direction;
- a soft magnetic material which surrounds the conductive line;
- a gap disposed in a part of the soft magnetic material;
- a magnetic free layer having a first portion and a second portion, and provided in a plane which is parallel to the first direction and a second direction crossing the first direction, the first portion being located in the gap, the second portion being located outside the gap;
- a magnetic pinned layer;
- and
- a tunnel barrier layer which is provided between the second portion of the magnetic free layer and the magnetic pinned layer.
4 more elements
Dependencies are inferred from the claim text.