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US 7,459,756 B2Granted
Method for forming a device having multiple silicide types
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Lin, Wen-Chin Lee, Yee-Chia Yeo, Chuan-Yi Lin, Chenming Hu
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Abstract
Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.
Claims31
A semiconductor device, comprising:
- a semiconductor substrate;
- a first silicide in a first active region of the substrate, wherein the first silicide is a first alloy silicide comprising a first metal with a first molar composition and a second metal;
- and
- a second silicide in a second active region of the substrate, wherein the second silicide is a second alloy silicide comprising the first metal with a second molar composition and the second metal, and wherein the first molar composition is different from the second molar composition.
1 more element
Dependencies are inferred from the claim text.