Back to results
US 7,459,750 B2Granted
Integrated half-bridge power circuit
AssigneeNXP B.V.
InventorsAdrianus Willem Ludikhuize, Jacob Antonius Van Der Pol, Raymond J. Grover
Life of this patent
Estimating the term…
Abstract
A down converter includes an integrated circuit, which includes a control FET (CF) and a synchronous rectifier FET (SF). The control FET is a lateral double-diffused (LDMOS) FET, and the conductivity-type of the LDMOS FET and the conductivity-type of the substrate are of the same type.
Claims12
A down converter, comprising:
- an integrated circuit having a control Field Effect Transistor (FET) (CF) disposed in a first well having a first polarity;
- and
- a synchronous rectifier FET (SF) having a source region and a channel region both disposed in a second well having a second polarity opposite the first polarity,
- wherein the control FET is a Lateral Double-Diffused Metal Oxide Semiconductor (LDMOS) type and the SF is a vertical Metal Oxide Semiconductor type;
- the first and second wells are formed in contact with a heavily doped region of a substrate;
- and a conductivity- type of the LDMOS FET and a conductivity-type of the heavily doped region of the substrate are of the same type;
- wherein at least a portion of the heavily doped region forms a drain region for the SF;
- and a source contact of the CF is connected to drain region of the SF via a conductive plug in the substrate.
5 more elements
Dependencies are inferred from the claim text.