Semiconductor memory device

A semiconductor memory device comprising:

• a semiconductor substrate;
• a semiconductor layer formed on the semiconductor substrate with an insulating film interposed therebetween;
• and
• a NAND cell unit formed on the semiconductor layer with a plurality of electrically rewritable and non-volatile memory cells connected in series, wherein openings are formed in the insulating film at locations corresponding to source/drain regions of the memory cells, and the semiconductor layer is in contact with the semiconductor substrate via the openings,
• wherein the semiconductor layer is a crystalline layer epitaxially grown from seed crystal areas in the semiconductor substrate, which are in contact with the semiconductor layer via the openings.