Optical enhancement of integrated circuit photodetectors
AssigneeAptina Imaging Corporation
InventorsChintamani Palsule, John H. Stanback, Thomas E. Dungan, Mark D. Crook
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Abstract
A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
Claims14
A semiconductor integrated circuit structure comprising:
- a light sensitive device integral with a semiconductor substrate, wherein the semiconductor substrate is silicon;
- a first dielectric disposed directly on top of the semiconductor substrate, the first dielectric formed from a silicon-rich oxynitride having an index of refraction adjustable by changing the relative atomic percentages of silicon, oxygen and nitrogen.
A semiconductor integrated circuit structure comprising:
- a p-type silicon substrate having a top surface;
- an n-type well disposed in the p-type silicon substrate;
- a recessed portion disposed in the n-type well, the recessed portion recessed from the top surface of the p-type silicon substrate;
- a cover dielectric disposed in the recessed portion;
- and
- a lens-formation dielectric disposed directly on top of the cover dielectric, the lens-formation dielectric formed from a silicon-rich oxynitride having an index of refraction adjustable by changing relative atomic percentages of silicon, oxygen and nitrogen.
Dependencies are inferred from the claim text.