Device containing isolation regions with threading dislocations
AssigneeThe Regents of the University of California
InventorsYa-Hong Xie, Tae-Sik Yoon
Life of this patent
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Abstract
An article of manufacture includes a substrate, a relaxed buffer layer disposed on the substrate, and a plurality of isolation regions formed in the relaxed buffer layer. The isolation regions include threading dislocations while the remainder of the relaxed buffer layer is substantially free of threading dislocations. The relaxed buffer layer may be formed from silicon germanium while the substrate may be formed from silicon. A capping layer may be disposed over the relaxed buffer layer.
Claims19
An article of manufacture comprising:
- a substrate;
- a single relaxed buffer layer disposed on the substrate;
- a capping layer disposed over the single relaxed buffer layer;
- and
- a plurality of isolation regions formed in the single relaxed buffer layer, wherein the isolation regions are formed in a substantially perpendicular intersecting network in the single relaxed buffer layer, wherein the isolation regions comprise threading dislocations, and wherein the remainder of the single relaxed buffer layer is substantially free of threading dislocations.
An article of manufacture comprising:
- a substrate;
- a single relaxed buffer layer disposed on the substrate;
- a capping layer disposed over the single relaxed buffer layer;
- an array of damaged regions formed in the single relaxed buffer layer, wherein the array of damaged regions comprises a plurality of lanes arranged in an intersecting orientation, and wherein the array of damaged regions comprises threading dislocations;
- and
- an array of non-damaged regions formed in the single relaxed buffer layer, wherein the array of non-damaged regions comprises an intersecting network, and wherein the intersecting network comrprises misfit dislocations and is substantially free of threading dislocations.
An article of manufacture comprising:
- a substrate;
- a single relaxed buffer layer disposed on the substrate;
- a capping layer disposed over the single relaxed buffer layer;
- and
- an intersecting dislocation network formed in the single relaxed buffer layer comprising misfit dislocation segments that intersect generally perpendicular to one another, wherein the single relaxed buffer layer is substantially free of threading dislocations, and wherein the intersectinci dislocation network is interrupted by a generally perpendicular network of isolation regions, the isolation regions comprising threading dislocations.
Dependencies are inferred from the claim text.