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US 7,459,728 B2Granted
Semiconductor light emitting device, image display system and illumination device
AssigneeSony Corporation
InventorToyoharu Oohata
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AssigneeSony Corporation
InventorToyoharu Oohata
Estimating the term…
Disclosed are a semiconductor light emitting device capable of enhancing a light emergence efficiency at a lower light emergence plane of the device by forming an electrode on a halfway area of a tilt crystal plane and a fabrication method thereof. According to this light emitting device, since light emitted by a light emitting region can be efficiently, totally reflected and a current can be injected only in a good crystalline region for the reason that the halfway area, on which the electrode is formed, of the tilt crystal plane is better in crystallinity than other regions of the tilt crystal plane, it is possible to enhance both a light emergence efficiency and a luminous efficiency, and hence to enhance the light emergence efficiency by an input current. According to an image display system and an illuminating system, each of which includes an array of the semiconductor light emitting devices of the present invention, and fabrication methods thereof, since the light emitting devices each of which is capable of exhibiting a high luminous efficiency by an input current are arrayed on a substrate on the system, it is possible to provide an image display system capable of reducing a density of a current to each device and displaying a high quality image, and an illuminating system capable of ensuring high brightness.
A semiconductor light emitting device comprising:
An image display system comprising an array of semiconductor light emitting devices for emitting light in response to signals, said semiconductor light emitting devices being each formed by forming a crystal layer having an approximately hexagonal pyramid shape comprising a plurality of tilt crystal planes that are tilted from a principal plane of a substrate and that intersect at a vertex of the approximately hexagonal pyramid shape, wherein the crystal layer comprises a first conductive type layer, an active layer, and a second conductive type layer, wherein the second conductive type is different from the first conductive type and the active layer is between the first conductive type layer and the second conductive type layer, and wherein said crystal layer is formed in such a manner that said first conductive type layer, said active layer, and said second conductive type layer extend within planes parallel to the tilt crystal planes, and wherein an electrode is formed on only a partial area of a first tilt crystal plane of the plurality of tilt crystal planes;
An illuminating system comprising an array of semiconductor light emitting devices for emitting light in response to signals, said semiconductor light emitting devices being each formed by forming a crystal layer having an approximately hexagonal pyramid shape comprising a plurality of tilt crystal planes that are tilted from a principal plane of a substrate and that intersect at a vertex at the top of the approximately hexagonal pyramid shape, wherein the crystal layer comprises a first conductive type layer, an active layer, and a second conductive type layer, wherein the second conductive type is different from the first conductive type and the active layer is between the first conductive type layer and the second conductive type layer, and wherein said crystal layer is formed in such a manner that said first conductive type layer, said active layer, and said second conductive type layer extend within planes parallel to the tilt crystal planes, and wherein an electrode is formed on only a partial area of a first tilt crystal plane of the plurality of tilt crystal planes;
Dependencies are inferred from the claim text.