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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKiyoshi Kato, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno
Estimating the term…
A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes semiconductor elements stacked by transferring a semiconductor element formed on a different substrate. A resin film is formed between the stacked semiconductor elements and a metal oxide film is partially formed between the stacked semiconductor elements as well. A first electric signal is converted to an optical signal in a light emitting element electrically connected to one of the stacked semiconductor elements. Meanwhile, the optical signal is converted to a second electric signal in a light receiving element electrically connected to another one of the stacked semiconductor elements.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device formed by detaching a first semiconductor element formed over a first substrate and a second semiconductor element formed over a second substrate and by stacking the first semiconductor element and the second semiconductor element over an element substrate, comprising:
A semiconductor device formed by detaching a first semiconductor element formed over a first substrate and a second semiconductor element formed over a second substrate and by stacking the first semiconductor element and the second semiconductor element over an element substrate, comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.