Thin film transistor array substrate and fabrication method thereof
AssigneeAu Optronics Corporation
InventorsChun-Chang Chiu, Wen-Yi Syu
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Abstract
A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.
Claims15
A thin film transistor array substrate, comprising:
- a substrate;
- a gate electrode overlying the substrate;
- a gate dielectric layer covering the substrate and the gate electrode;
- a semiconductor layer overlying the gate dielectric layer, comprising a channel;
- a source electrode electrically connecting a portion of the semiconductor layer on one side of the channel;
- a drain electrode electrically connecting a portion of the semiconductor layer on the other side of the channel, the drain electrode not overlapping with the gate electrode;
- and
- a light shielding layer between the semiconductor layer and the gate dielectric layer.
A liquid crystal display panel, comprising:
- a first substrate;
- a second substrate opposite the first substrate;
- a thin film transistor disposed overlying the first substrate, where in the thin film transistor comprises:
- a gate electrode overlying the first substrate;
- a gate dielectric layer covering the first substrate and the gate electrode;
- a semiconductor layer overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel;
- a source electrode electrically connecting a portion of the semiconductor layer on one side of the channel;
- and
- a drain electrode electrically connecting a portion of the semiconductor layer on the other side of the channel, the drain not overlapping the gate electrode;
- a liquid crystal layer interposed between the first substrate and the second substrate;
- and
- a light shielding layer between the semiconductor layer and the gate dielectric layer.
Dependencies are inferred from the claim text.