Field effect type organic transistor and process for production thereof

A process for producing a field effect type organic transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and an organic semiconductor layer, the process comprising the steps of:

• forming the gate insulating layer containing an optical anisotropic material;
• and
• forming the organic semiconductor layer in contact with an anisotropic structure formed by irradiation of light to the optical anisotropic material,
• wherein the optical anisotropic material is represented by one of the following formulas (H1) through (H4):
• where R represents H, a halogen, CN, CF3, or an alkyl or perfluoroalkvl group of 1 to 20 carbon atoms:
• in the alkyl, one or more of methylene groups may be replaced by O, CO, NH, or S;
• X represents an alkylene group of 1 to 20 carbon atoms:
• in the alkylene, one or more of methylene groups may be replaced by O, CO, NH, or S;
• A represents —CH—CH2—, —C(CH3)—CH2—, or —SiZ-O—:
• Z representing an alkyl or alkoxy group of 1 to 20 carbons;
• and n represents an integer showing a polymer, ranging from 10 to 100,000 corresponding to a number-average polymerization degree.