Phase change memory cell and manufacturing method
AssigneeMacronix International Co., Ltd.
InventorHsiang Lan Lung
Life of this patent
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Abstract
A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second electrodes. The phase change bridge may extend over the generally coplanar surfaces and across the gap. The phase change bridge has a higher transition temperature bridge portion and a lower transition temperature portion. The lower transition temperature portion comprises a phase change region which can be transitioned from generally crystalline to generally amorphous states at a lower temperature than the higher transition temperature portion. A method for making a phase change memory cell is also disclosed.
Claims15
A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:
- first and second electrodes having generally coplanar surfaces spaced apart by a gap;
- a phase change bridge electrically coupling the first and second electrodes;
- at least a section of the phase change bridge comprising a higher transition temperature bridge portion and a lower transition temperature portion;
- and
- the lower transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher transition temperature portion.
A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:
- first and second electrodes having generally coplanar surfaces spaced apart by a gap;
- a phase change bridge electrically coupling the first and second electrodes, the phase change bridge extending over the generally coplanar surfaces on the first and second electrodes and across the gap;
- at least a section of the phase change bridge comprising first and second higher transition temperature portions and a lower transition temperature portion, the first and second higher transition temperature portions located on different sides of the lower transition temperature portion, the transition temperature of the higher transition temperature portion being at least about 100° C. greater than the transition temperature of the lower transition temperature portion;
- and
- the lower transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher transition temperature portion.
Dependencies are inferred from the claim text.