Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device

A charged particle beam exposure device of a character projection system comprising:

• a stage on which a substrate is to be mounted;
• a driving mechanism which drives an aperture mask having a plurality of character apertures;
• a beam generation source of charged particles which applies beams of the charged particles to the substrate via the aperture mask;
• a correction section which corrects dimensions of designed patterns of design data in consideration of at least one of a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a distance by which an underlayer provided under a resist is influenced by a diffusion of an acid in the resist to be exposed to the beam of the charged particle, and a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask;
• a writing data producing section which allocates at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data;
• and
• an exposure section which exposes the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

A program for use in a charged particle beam exposure device on which an aperture mask having a plurality of character apertures is mounted, the program allowing a computer to execute:

• an instruction to correct dimensions of designed patterns in consideration of at least one of a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a distance by which an underlayer provided under a resist is influenced by a diffusion of an acid in the resist to be exposed to the beam of the charged particle, and a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask;
• an instruction to allocate at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data;
• and
• an instruction to expose the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

A manufacturing method of a semiconductor device in which a charged particle beam exposure method of a character projection system is used in manufacturing steps of the semiconductor device, the charged particle beam exposure method comprising:

• preparing an aperture mask having a plurality of character apertures each having a plurality of opening patterns;
• correcting dimensions of designed patterns of design data in consideration of at least one of a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a distance by which an underlayer provided under a resist is influenced by a diffusion of an acid in the resist to be exposed to the beam of the charged particle, and a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask;
• allocating at least a part of a plurality of opening patterns of a specified character aperture specified from the plurality of character apertures to those of the plurality of designed patterns which are in a shot region including at least a designed pattern having a dimension changed by the correction to produce writing data;
• and
• exposing the resist to the beams of the charged particle passed through the at least a part of the opening patterns of the specified character aperture based on the writing data.