Ion implant beam angle integrity monitoring and adjusting
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsSteven Walther, Ukyo Jeong, Sandeep Mehta
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Abstract
A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.
Claims24
An ion implanter system, the system comprising:
- an ion beam generator for generating an ion beam;
- a platen;
- a first test wafer disposed on the platen toward which the ion beam is directed;
- a second test wafer disposed on the platen toward which the ion beam is directed along a wall of at least one template, the at least one template positioned adjacent an ion beam path, each template having a template surface that impedes a motion of an ion in the ion beam in response to the ion impacting the template surface, wherein the ion impacts the template surface in the case that a trajectory of the ion varies from an optimum trajectory by at least a pre-determined maximum variance angle and wherein the ion impacts the second test wafer in the case that the trajectory of the ion varies from the optimum trajectory by less than the pre-determined maximum variance angle;
- and
- means for determining, using the at least one template and the first and second test wafers, whether an ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle to monitor an integrity of the ion beam, wherein the means for determining measures a difference between a first number of ions that impact the first test wafer and a second number of ions that impact the second test wafer to determine whether the ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle.
A system for monitoring an integrity of an ion beam, the system comprising:
- a platen;
- a first test wafer disposed on the platen toward which an ion beam is directed;
- a second test wafer disposed on the platen toward which the ion beam is directed along a wall of at least one template, the at least one template positioned adjacent an ion beam path, each template having a template surface that impedes a motion of an ion wherein the ion impacts the template wall in the case that a trajectory of the ion varies from an optimum trajectory by at least a pre-determined maximum variance angle and wherein the ion impacts the second test wafer in the case that the trajectory of the ion varies from the optimum trajectory by less than the pre-determined maximum variance angle;
- and
- means for determining, using the at least one template and the first and second test wafers, whether an ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle to monitor the integrity of the ion beam, wherein the means for determining measures a difference between a first number of ions that impact the first test wafer and a second number of ions that impact the second test wafer to determine whether the ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle.
A method of monitoring angle integrity of an ion beam, the method comprising the steps of:
- transmitting an ion beam toward a first test wafer disposed on a platen;
- transmitting the ion beam adjacent to at least one template toward a second test wafer disposed on the platen along a wall of the template, the at least one template having a template surface that impedes a motion of an ion that varies from an optimum trajectory by at least a pre-determined maximum variance angle and wherein the ion impacts the second test wafer in the case that the trajectory of the ion varies from the optimum trajectory by less than the pre-determined maximum variance angle;
- and
- determining, using the at least one template and the first and second test wafers, whether an ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle to monitor angle integrity of the ion beam, wherein the determining step measures a difference between a first number of ions that impact the first test wafer and a second number of ions that impact the second test wafer to determine whether the ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle.
A computer program product comprising a computer useable medium having computer readable program code embodied therein for determining the integrity of the angle of an ion beam generated by a ion implanter system and transmitted by the ion implanter system, the program product comprising:
- program code configured to control transmitting an ion beam toward a first test wafer disposed on a platen;
- program code configured to control transmitting the ion beam adjacent to at least one template along a wall of the template toward a second test wafer disposed on the platen, the at least one template having a surface that impedes a motion of an ion that varies from an optimum trajectory by at least a pre-determined maximum variance angle and wherein the ion impacts the second test wafer in the case that the trajectory of the ion varies from the optimum trajectory by less than the pre-determined maximum variance angle;
- and
- program code configured to determine, using the at least one template and the first and second test wafers, whether an ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle to monitor angle integrity of the ion beam, wherein the program code measures a difference between a first number of ions that impact the first test wafer and a second number of ions that impact the second test wafer to determine whether the ion beam trajectory varies from the optimum trajectory by at least the pre-determined maximum variance angle.
Dependencies are inferred from the claim text.