Non-linear terahertz spectroscopy for defect density identification in high k dielectric films
AssigneeNew Jersey Institute of Technology
InventorsJohn Francis Federici, Haim Grebel, Hakan Altan
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Abstract
Methods to infer the density of defects in high κ dielectric films in a non-contact, non-invasive and non-destructive manner. THz radiation is employed to measure the change in electrical conductivity of the films before and after illumination with visible light, where the visible light photoionizes the defects thereby changing the electrical conductivity and changing the transmission (or reflection) of THz radiation from the films. The disclosed techniques can be employed to make measurements as soon as wafers are fabricated. The technology is applicable to wafers of any size.
Claims19
A method for identifying a desired characteristic of an object, the method comprising the steps of:
- illuminating the object with continuous wave laser pump beam at a predetermined wavelength related to the desired characteristic, wherein the object includes a high-K dielectric material within the object;
- transmitting terahertz pulses at the object;
- and
- receiving terahertz pulses reflected by the object, so that the desired characteristic can be determined from the received terahertz pulses wherein the desired characteristic is a quantitative estimate of he one of defect density and mobility.
A method for identifying a desired characteristic of an object, the method comprising the steps of:
- illuminating the object with continuous wave laser pump beam at a predetermined wavelength related to the desired characteristic, wherein the object includes high-k dielectric material buried within the object;
- transmitting terahertz pulses at the object;
- and
- receiving the terahertz pulses transmitted through the object, so that the desired characteristic can be determined from the received terahertz pulses wherein the desired characteristic is a quantitative estimate of one of defect density and mobility.
A method, comprising:
- providing a wafer including a crystal substrate and a high-K oxide dielectric layer disposed on the substrate;
- illuminating the wafer with a continuous wave laser pump beam;
- transmitting terahertz pulses at the wafer;
- and
- receiving terahertz pulses reflected by the wafer, or transmitted through the wafer, and quantitatively measuring at least one characteristic of the wafer at an interracial layer within the wafer.
Dependencies are inferred from the claim text.