# US 7,459,406 B2 · Laser processing unit, laser processing method, and method for manufacturing semiconductor device

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- Number: US 7,459,406 B2
- Document ID: US7459406B2
- Status: Granted
- Kind: B2
- Application number: 11/212,927
- Filed: 2005-08-29
- Published: 2006-04-13
- Granted: 2008-12-02
- Earliest claimed: 2004-09-10
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Koichiro Tanaka; Yoshiaki Yamamoto
- Web page: https://patentgrep.com/patent/US7459406B2

## CPC

- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- B23K 26/0736: {into an oval shape, e.g. elliptic shape}
- B23K 26/142: for the removal of by-products
- H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3211: {Silicon, silicon germanium or germanium}
- H10P 14/3238: {being insulating materials}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3251: {consisting of three or more layers}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3452: {Microstructure}
- H10P 14/3806: {using crystallisation-enhancing elements}
- H10P 14/381: {Beam shaping, e.g. using a mask}
- H10P 14/3814: {Continuous wave laser beam}
- H10P 14/3816: {Pulsed laser beam}
- H10P 14/382: {Scanning of a beam}
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 14/3808: {using laser beams}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Objects of the present invention is to reduce a number of scanning a linear laser, to shorten the amount of time for laser annealing, and to reduce a manufacturing process, a manufacturing time, and manufacturing cost of a semiconductor device. In this invention, a gas at high temperature is locally blown so as to overlap at an irradiation surface of linear laser light. The linear laser light can be obtained by injecting laser light radiated from a laser oscillator into a lens. The gas at high temperature can be obtained by heating a gas which is compressed using a gas compressor, by a nozzle type heater. The heated has is sprayed so as to overlap with the irradiation surface of the linear laser light.

## Claims

### Claim 1

A laser processing unit comprising:
a laser oscillator for radiating a laser light;
a lens for processing the radiated laser light into linear laser light; and
a nozzle type heater for heating and blowing a gas,
wherein the nozzle type heater blows the heated gas to a surface irradiated by the linear laser light.

### Claim 2

A laser processing method, using a laser processing unit including a laser oscillator, a lens, and a nozzle type heater, comprising the steps of:
radiating a laser light from the laser oscillator;
processing the radiated laser light into linear laser light by the lens;
heating a gas using the nozzle type heater; and
blowing the heated gas from the nozzle type heater to a surface irradiated by the linear laser light.

### Claim 3 (depends on 2)

A laser processing method according to claim 2, wherein the laser light is a continuous wave laser light.

### Claim 4 (depends on 2)

A laser processing method according to claim 2, wherein the laser light is a pulsed oscillation laser light having a repetition frequency of 10 MHz or more.

### Claim 5 (depends on 2)

A laser processing method according to claim 2, wherein the laser light is pulsed oscillation laser light having a repetition frequency of 80 MHz or more.

### Claim 6 (depends on 2)

A laser processing method according to claim 2, wherein the heated gas is heated to a temperature in a range from 300° C. to 1500° C.

### Claim 7 (depends on 2)

A laser processing method according to claim 2, wherein the gas is an inert gas such as nitrogen or argon, or air.

### Claim 8 (depends on 2)

A laser processing method according to claim 2, wherein the gas includes oxygen.

### Claim 9

A method for manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film over a substrate; and
blowing a heated gas from a nozzle type heater to the semiconductor film while irradiating the semiconductor film with a linear laser light,
wherein the linear laser light is obtained by radiating a laser light from a laser oscillator and processing the radiated laser light into the linear laser light using a lens,
wherein the heated gas is obtained by heating a gas using the nozzle type heater, and
wherein the semiconductor device is formed by using the semiconductor film to which the heated gas is blown while irradiating with the linear laser light.

### Claim 10 (depends on 9)

A method for manufacturing a semiconductor device according to claim 9, wherein the laser light is a continuous wave laser light.

### Claim 11 (depends on 9)

A method for manufacturing a semiconductor device according to claim 9, wherein the laser light is pulsed oscillation laser light having a repetition frequency of 10 MHz or more.

### Claim 12 (depends on 9)

A method for manufacturing a semiconductor device according to claim 9, wherein the laser light is pulsed oscillation laser light having a repetition frequency of 80 MHz or more.

### Claim 13 (depends on 9)

A method for manufacturing a semiconductor device according to claim 9, wherein the heated gas is heated to a temperature in a range from 300° C. to 1500° C.

### Claim 14 (depends on 9)

A method for manufacturing a semiconductor device according to claim 9, wherein the gas is an inert gas such as nitrogen or argon, or air.

### Claim 15 (depends on 9)

A method for manufacturing a semiconductor device according to claim 9, wherein the gas includes oxygen.