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US 7,459,399 B2Granted
Method for manufacturing probe structure of probe card
AssigneeUnitest Inc.
InventorsBong Hwan Kim, Jong Bok Kim
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Abstract
A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching process of an SOI substrates is carried out using a sidewall insulating film pattern as an etching mask to facilitate a formation of a bump and microscopic probe structure of the probe card.
Claims13
A method for manufacturing a probe structure, the method comprising steps of:
- (a) forming a first mask layer pattern defining a probe beam region on a semiconductor substrate;
- (b) forming a second mask layer pattern defining a probe tip region on the semiconductor substrate and the first mask layer pattern;
- (c) etching the semiconductor substrate using the second mask layer pattern as an etching mask to form the probe tip region;
- (d) removing the second mask layer pattern;
- (e) etching the semiconductor substrate using the first mask layer pattern as the etching mask to form the probe beam region;
- (f) forming a sidewall insulating film pattern on a sidewall of each of the probe tip region and the probe beam region;
- (g) etching a predetermined thickness of a portion of the semiconductor substrate exposed by the first mask layer pattern;
- (h) removing the sidewall insulating film pattern and the first mask layer pattern;
- and
- (i) forming a probe tip and a probe beam in the probe tip region and the probe beam region.
7 more elements
Dependencies are inferred from the claim text.