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US 7,459,398 B2Granted
Slurry for CMP, polishing method and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsGaku Minamihaba, Yukiteru Matsui, Hiroyuki Yano
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Abstract
Disclosed is a CMP slurry comprising an abrasive grain, and a mixed surfactant comprising a first polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature, and a second polyether type nonionic surfactant having an HLB value ranging from 10 to 20 at room temperature.
Claims7
A polishing method comprising:
- contacting a polishing surface of a semiconductor substrate with a polishing pad attached to a turntable;
- and
- dropping a CMP slurry onto the polishing pad to polish the polishing surface, the CMP slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising an abrasive grain, and a mixed surfactant comprising a first nonionic surfactant formed of a polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature and a second nonionic surfactant formed of a polyether type nonionic surfactant having an HLB value ranging from 10 to 20 at room temperature, and the second slurry comprising an abrasive grain, and a mixed surfactant comprising a first nonionic surfactant having a clouding point ranging from 19 to 51° C. and a second nonionic surfactant having a clouding point of 55° C. or more.
A method of manufacturing a semiconductor device comprising:
- forming an insulating film above a semiconductor substrate;
- forming a recess in the insulating film;
- depositing a conductive material inside the recess and above the insulating film to form a conductive layer;
- and
- removing the conductive material which is deposited above the insulating film by CMP using a CMP slurry to expose the insulating film while selectively leaving the conductive material in the recess;
- the CMP slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising an abrasive grain, and a mixed surfactant comprising a first nonionic surfactant formed of a polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature and a second nonionic surfactant formed of a polyether type nonionic surfactant having an HLB value ranging from 10 to 20 at room temperature, and the second slurry comprising an abrasive grain, and a mixed surfactant comprising a first nonionic surfactant having a clouding point ranging from 19 to 51° C. and a second nonionic surfactant having a clouding point of 55° C. or more.
3 more elements
Dependencies are inferred from the claim text.