Method for fabricating semiconductor components with thinned substrate, circuit side contacts, conductive vias and backside contacts

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a contact on the circuit side and a backside;
• forming an opening from the backside to a surface of the contact,
• the forming the opening step comprising laser machining from the backside part way through the substrate, and then etching to the surface of the contact;
• forming a conductive via in the opening in electrical contact with the surface of the contact;
• and
• forming a second contact on the backside in electrical communication with the conductive via.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a contact on the circuit side and a backside;
• forming an opening from the backside to a surface of the contact;
• forming a conductive via in the opening in electrical contact with the surface of the contact;
• forming an insulating layer in the opening prior to the forming the conductive via step;
• and
• forming a second contact on the backside in electrical communication with the conductive via.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a contact on the circuit side and a backside;
• forming a first polymer layer on the circuit side;
• forming an opening from the backside to a surface of the contact;
• forming a conductive via in the opening in electrical contact with the surface of the contact;
• forming a second polymer layer on the backside;
• and
• forming a second contact on the backside in electrical communication with the conductive via.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a plurality of die contacts on the circuit side having inner surfaces, and a backside;
• forming a plurality of openings from the backside to the inner surfaces of the die contacts;
• following the forming the openings step, thinning the substrate from the backside;
• forming a plurality of conductive vias in the openings in electrical contact with the inner surfaces;
• forming a plurality of second contacts on the backside in electrical communication with the conductive vias;
• and
• forming a plurality of conductors and terminal contacts on the circuit side in electrical communication with the conductive vias.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a plurality of die contacts on the circuit side having inner surfaces, and a backside;
• forming a plurality of openings from the backside to the inner surfaces of the die contacts by laser machining part way through the substrate, and etching from the back side to the surfaces;
• forming a plurality of conductive vias in the openings in electrical contact with the inner surfaces;
• forming a plurality of second contacts on the backside in electrical communication with the conductive vias;
• and
• forming a plurality of conductors and terminal contacts on the circuit side in electrical communication with the conductive vias.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a plurality of die contacts on the circuit side having inner surfaces, and a backside;
• forming a first polymer layer on the circuit side and a second polymer layer on the backside;
• forming a plurality of openings from the backside to the inner surfaces of the die contacts;
• forming a plurality of conductive vias in the openings in electrical contact with the inner surfaces;
• forming a plurality of second contacts on the backside in electrical communication with the conductive vias;
• and
• forming a plurality of conductors and terminal contacts on the circuit side in electrical communication with the conductive vias.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a plurality of die contacts on the circuit side having inner surfaces, and a backside;
• forming a plurality of openings from the backside to the inner surfaces of the die contacts;
• forming a plurality of conductive vias in the openings in electrical contact with the inner surfaces;
• forming insulating layers in the openings prior to the forming the conductive vias step;
• forming a plurality of second contacts on the backside in electrical communication with the conductive vias;
• and
• forming a plurality of conductors and terminal contacts on the circuit side in electrical communication with the conductive vias.