Semiconductor electronic device and method of manufacturing thereof
AssigneeSTMicroelectronics S.r.l.
InventorsRoberto Tiziani, Carlo Passagrilli
Life of this patent
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Abstract
A semiconductor electronic device includes a die of semiconductor material and a support. The die of semiconductor material includes an integrated electronic circuit and a plurality of contact pads associated with the electronic circuit and connected electrically to the support by wire leads. Each contact pad may include a lower layer of aluminum, copper, or alloys thereof, and an upper layer including at least one film of a metal and/or metallic alloy including nickel, palladium, or alloys thereof, and being deposited by an electroless chemical process.
Claims9
A method for making at least one contact pad on a die of a power semiconductor device comprising:
- forming a lower layer comprising at least one of copper, and alloys thereof adjacent the die, with the copper having a thickness within a range of 0.7 to 10 microns;
- forming a zinc film overlying the lower layer, with the zinc layer having a thickness within a range of 0.05 to 0.3 microns;
- and
- forming an upper layer adjacent zinc film and the lower layer, the upper layer comprising a first film consisting essentially of nickel overlying the zinc film, and a second film consisting essentially of palladium overlying the first film, with the first film having a thickness within a range of 1 to 20 microns and the second film having a thickness within a range of 0.1. to 3 microns so that the power semiconductor device operates at a temperature greater than or equal to 140° C.
A method for making at least one contact pad on a die of a semiconductor device comprising:
- forming a lower layer comprising at least one of copper, and alloys thereof adjacent the die;
- and
- forming an upper layer adjacent the lower layer, the upper layer comprising a first film comprising at least one of zinc and alloys thereof overlying the lower layer, a second film consisting essentially of nickel overlying the first film, and a third film consisting essentially of palladium overlying the second film.
Dependencies are inferred from the claim text.