Transfer method for forming a silicon-on-plastic wafer

A method of fabricating a silicon-on-plastic layer via layer transfer comprising:

• preparing a silicon substrate;
• depositing a layer of SiGe on the silicon substrate;
• depositing a layer of insulator on the SiGe layer;
• implanting hydrogen ions into the silicon substrate through the SiGe layer in a relaxation hydrogen implantation step;
• annealing the silicon substrate and SiGe layer in a first annealing step to relax the SiGe layer;
• thereby forming a relaxed SiGe layer;
• smoothing the relaxed SiGe layer;
• depositing a layer of silicon on the relaxed SiGe layer;
• implanting hydrogen ions in a splitting hydrogen implantation step to facilitate splitting of the wafer;
• preparing a glass substrate;
• bonding the glass substrate to the strained silicon layer to form a composite wafer;
• splitting the composite wafer to provide a split wafer having, in seriatim, a glass substrate, a layer of strained silicon;
• a layer of relaxed SiGe;
• and silicon layer split from the silicon substrate;
• dry etching the split wafer to remove the silicon layer split from the silicon substrate and a portion of the relaxed SiGe layer;
• annealing the split wafer to increase the bond between the strained silicon and the glass substrate in a second annealing step;
• selectively etching the split wafer to remove any remaining SiGe, thereby forming a strained silicon-on-glass wafer;
• depositing a dielectric on the silicon side of the silicon-on-glass wafer;
• preparing a plastic substrate;
• applying adhesive and bonding the plastic to the silicon side of the silicon-on-glass wafer;
• removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer;
• and
• completing a desired IC device on the silicon-on-glass wafer.