US 7,459,372 B2 · Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the same

Abstract

The present invention can provide methods of manufacturing a thin film including hafnium titanium oxide. The methods can include introducing a first reactant including a hafnium precursor onto a substrate; chemisorbing a first portion of the first reactant to the substrate, and physisorbing a second portion of the first reactant to the substrate and the chemisorbed first portion of the first reactant; providing a first oxidant onto the substrate; forming a first thin film including hafnium oxide on the substrate; introducing a second reactant including a titanium precursor onto the first thin film; chemisorbing a first portion of the second reactant to the first thin film, and physisorbing a second portion of the second reactant to the first thin film and the chemisorbed first portion of the second reactant; providing a second oxidant onto the first thin film; and forming a second thin film including titanium oxide on the first thin film. The present invention can further provide methods of manufacturing a gate structure and a capacitor.

Claims27

Dependent claims

A method of manufacturing a thin film comprising:

introducing a first reactant comprising a hafnium precursor onto a substrate;
chemisorbing a first portion of the first reactant to the substrate, and physisorbing a second portion of the first reactant to the substrate and the chemisorbed first portion of the first reactant;
providing a first oxidant onto the substrate;
forming a first thin film comprising hafnium oxide on the substrate by chemically reacting the first oxidant with the chemisorbed first portion of the first reactant;
introducing a second reactant comprising a titanium precursor onto the first thin film;
chemisorbing a first portion of the second reactant to the first thin film, and physisorbing a second portion of the second reactant to the first thin film and the chemisorbed first portion of the second reactant;
providing a second oxidant onto the first thin film;
and
forming a second thin film comprising titanium oxide on the first thin film by chemically reacting the second oxidant with the chemisorbed first portion of the second reactant.

6 more elements

A method of manufacturing a gate structure comprising:

forming a gate insulation layer on a substrate by atomic layer deposition (ALD) using a hafnium precursor, a titanium precursor and an oxidant, wherein the gate insulation layer comprises hafnium titanium oxide;
forming a gate conductive layer on the gate insulation layer;
and
forming a gate insulation pattern and a gate conductive pattern on the substrate by etching the gate conductive layer and the gate insulation layer.

1 more element

A method of manufacturing a capacitor comprising:

forming a lower electrode on a substrate;
forming a dielectric layer on the lower electrode by atomic layer deposition (ALD) using a hafnium precursor, a titanium precursor and an oxidant, wherein the dielectric layer comprises hafnium titanium oxide;
and
forming an upper electrode on the dielectric layer.

1 more element

Dependencies are inferred from the claim text.

Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the same

Life of this patent

Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the same

Life of this patent

Abstract

Claims27