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US 7,459,371 B2Granted
Method for non-volatile memory fabrication
AssigneeWinbond Electronics Corp.
InventorsTseung-Yuen Tseng, Chih-Yi Liu, Chun-Chieh Chuang
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Abstract
A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.
Claims23
A method for non-volatile memory fabrication, comprising:
- providing a substrate;
- forming a bottom electrode on the substrate;
- coating a solution with precursors containing Zr and Sr on the bottom electrode, wherein the solution with precursors containing Zr and Sr is prepared by:
- providing a first solvent in a container;
- adding an metallorganic compound of Sr into the container to mix with the first solvent to form a first solution;
- adding a second solvent to the first solution;
- and
- adding an metallorganic compound of Zr other than the second solvent to the first solution to form the solution;
- heating the solution on the bottom electrode surface to form a resistor layer of SrZrO3;
- and
- forming a top electrode on the resistor layer.
8 more elements
Dependencies are inferred from the claim text.