Method for fabricating a semiconductor component

A method for fabricating a semiconductor component comprising:

• providing a semiconductor body having a front side and a drift zone region;
• producing a trench extending at least into the drift zone region proceeding from the front side;
• producing a dielectric layer on at least a portion of the sidewalls of the trench;
• and
• at least partly filling the trench with a semiconductor material which adjoins the dielectric layer and which is chosen in such a way that the quotient of the net dopant charge of the semiconductor material arranged in the trench and the total area of the sections of the dielectric layer which are arranged between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor body having a front side and a drift zone region;
• producing a trench extending at least into the drift zone region proceeding from the front side;
• producing a strain layer made of crystalline or monocrystalline semiconductor material on at least a portion of the sidewalls of the trench;
• producing a channel layer made of crystalline or monocrystalline semiconductor material and arranged on at least a portion of the strain layer, the lattice constant of the channel layer semiconductor material differing from the lattice constant of the strain layer semiconductor material;
• producing a sacrificial layer arranged on at least a portion of the channel layer;
• filling the trench at least partly with a semiconductor filling material which adjoins the sacrificial layer and which is chosen in such a way that the quotient of the net dopant charge of the entire semiconductor filling material arranged in the trench and the total area of the sections of the sacrificial layer which are arranged between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material;
• and
• replacing at least a portion of the sacrificial layer with a dielectric.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor body having a front side and a drift zone region;
• producing a trench extending at least into the drift zone region proceeding from the front side;
• producing a strain layer made of crystalline or monocrystalline semiconductor material and arranged on at least a portion of the sidewalls of the trench;
• producing a channel layer made of crystalline or monocrystalline semiconductor material and arranged on at least a portion of the strain layer, the lattice constant of the channel layer semiconductor material differing from the lattice constant of the strain layer semiconductor material;
• producing a dielectric layer arranged on at least a portion of the channel layer;
• and
• filling the trench at least partly with a semiconductor filling material which adjoins the dielectric layer and which is chosen in such a way that the quotient of the net dopant charge of the entire semiconductor filling material arranged in the trench and the total area of the sections of the dielectric layer which are arranged between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material.