Semiconductor device with ferroelectric capacitor and fabrication method thereof
AssigneeFujitsu Limited
InventorKatsuyoshi Matsuura
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Abstract
A semiconductor device fabrication method includes the steps of forming a conductive plug in an insulating layer on a semiconductor substrate so as to be connected to an element on the substrate; forming a titanium aluminum nitride (TiAlN) oxygen barrier film over the conductive plug; forming a titanium (Ti) film over the oxygen barrier film; applying a thermal process to the titanium film in nitrogen atmosphere to allow the titanium film to turn into a titanium nitride (TiN) film; and forming a lower electrode film of a capacitor over the titanium nitride film.
Claims8
A semiconductor device fabrication method comprising the steps of:
- forming a conductive plug in an insulating layer on a semiconductor substrate so as to be connected to an element on the substrate;
- performing NH3 plasma irradiation on the insulating layer and a surface of the conductive plug after planarization;
- forming a titanium aluminum nitride (TiAlN) oxygen barrier film over the NH3 plasma irradiated conductive plug;
- forming a titanium (Ti) film over the oxygen barrier film;
- applying a thermal process to the titanium film in a nitrogen atmosphere to allow the titanium film to turn into a titanium nitride (TiN) film;
- and
- forming an iridium (Ir) containing lower electrode film of a capacitor over the titanium nitride film.
Dependencies are inferred from the claim text.