Method of forming pixel sensor cell having reduced pinning layer barrier potential

A method of forming a pixel sensor cell comprising the steps of:

• a) providing a semiconductor substrate;
• b) forming a gate structure on said substrate;
• c) forming a pinning layer comprising material of a first conductivity type in said substrate;
• d) forming a collection well region comprising material of a second conductivity type beneath said pinning layer;
• e) forming a gate diffusion region of a second conductivity type in said substrate adjacent a second side of said gate structure, said gate structure forming a channel region enabling charge transfer between said collection well region and said diffusion region;
• and
• f) forming a doped layer in a different step than said step of forming said collection well region, said doped layer comprising material of said second conductivity type adjacent to said first side of said gate structure for coupling said collection well region and said channel region to reduce potential barrier interference to charge transfer caused by said pinning layer.